Publication Date:
2015-04-07
Description:
Author(s): H. Suzuki, K. Zhao, G. Shibata, Y. Takahashi, S. Sakamoto, K. Yoshimatsu, B. J. Chen, H. Kumigashira, F.-H. Chang, H.-J. Lin, D. J. Huang, C. T. Chen, Bo Gu, S. Maekawa, Y. J. Uemura, C. Q. Jin, and A. Fujimori Diluted magnetic semiconductors have attracted much attention as candidates for spintronic devices after the discovery of ferromagnetism in Mn-doped GaAs. However, the limited chemical solubility of the magnetic element Mn together with the inability to control carrier density independently of the magnetic element concentration are major obstacles to material design and applications. The newly found diluted magnetic semiconductor Ba 1- y K y (Zn 1- x Mn x ) 2 As 2 , which has the same crystal structure as the iron-based superconductor BaFe 2 As 2 , circumvents these problems and exhibits ferromagnetic transition temperatures as high as 230 K. Using x-ray absorption and resonance photoemission spectroscopy this group explicitly demonstrates that the ThCr 2 Si 2 -type crystal structure is an ideal framework both for high-temperature superconductivity and for ferromagnetism, and that the carrier-induced ferromagnetism of GaMnAs is operating in other ferromagnetic semiconductors. [Phys. Rev. B 91, 140401] Published Mon Apr 06, 2015
Keywords:
Magnetism
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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