ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The reaction between Cu and TiSi2 is studied with and without barriers, Cu being used for interconnect and TiSi2 as the gate silicide for the metal-oxide-semiconductor devices. The barriers include Ta, TiN, and W. Without a barrier, Cu reacts with TiSi2 below 300 °C, forming Cu silicides. An improvement in thermal stability by 50–100 °C is obtained using the barriers, with TiN/Ti being the most effective. A combined use of these barriers, with a final structure of Ta/Cu/Ta/W/TiN/Ti/TiSi2 /Si, suppresses the Cu-TiSi2 reaction until above 600 °C. The reaction mechanisms involved, and their relation with the reactions between Cu and other silicides, are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104249
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