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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3645-3655 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of dilution gases on hydrogenated amorphous silicon nitride (a-SiNx:H) films were investigated. Silane and ammonia were used as the reactive species, while nitrogen, helium, hydrogen, and argon were used as the dilution gases in a plasma-enhanced chemical vapor-deposition system at a substrate temperature of 300 °C. The electrical, physical, and chemical properties of the a-SiNx:H films were found to be highly sensitive to the various kinds and flow rates of the carrier gases in the deposition. Additionally, the physical properties of growth rate, refractive index, and etching rate were also investigated. The hydrogen bonding configuration was explored by infrared spectroscopy. The total hydrogen concentrations for all a-SiNx:H films were observed to be smaller than 3.0×1022 cm−3. The electrical properties were characterized by I-V and C-V measurements in metal-insulator-semiconductor structures. The breakdown strength was determined at the current density of 3 mA/cm2; in addition, the dominant mode of electronic conduction would appear to be the Poole–Frenkel emission. The interface trap state density Dit which ranged from 3.4×1011 to 1.3×1012 cm−2 eV−1 was evaluated by the C-V characteristics. Finally, the influences of the gas dilution in the a-SiNx:H films, as applied to the devices, were investigated by using the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). Analyses of the transfer characteristics of the TFT devices revealed that the density of deep gap states is 4×1012 cm−2 eV−1 and the field-effect mobility μFE is changing from 0.37 to 1.45 cm2/V s.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2638-2648 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition of high quality silicon dioxides was obtained at low temperatures by a specially designed plasma chemical vapor deposition (PECVD) system. The system employed a long quartz tube as a reactor and a set of three vertically standing plates for glow discharge. The deposited oxide, which employed a large amount of helium (He) to dilute silane (SiH4) and nitrous oxide (N2O) reactants, was observed to possess excellent qualities, as compared to those of thermally grown oxides. The chemical composition used for obtaining electrical integrities of the PECVD oxides was investigated. Additionally, the effects of post-metallization annealing on the oxides were investigated in detail. Oxides deposited at a substrate temperature of 250 °C were observed to possess a low interface trap state density (Dit) of only 3×1010 cm−2 eV−1 and low total trapped charge density (Qtotal) of 5.8×1016 cm−3. Those, however, which were deposited at 350 °C, have more stable electrical characteristics under current/voltage bias-temperature stress, but their Dit and Qtotal are around 2×1011 cm−2 eV−1 and 3.4×1016 cm−3, respectively. An atom-bonding model was proposed in this present work, according to physical, chemical, and electrical analyses in accounting for phenomena of charge-trapping and also in upgrading the electrical integrity of the deposited oxides. The applicability of these low-temperature oxides toward fabricating hydrogenated amorphous-silicon thin film transistor (a-Si:H TFT's) was investigated. Adequate electrical performances of the TFT's with a high on/off current ratio of more than 106 and high field effect mobility (μFET) of around 0.6 cm2/V s were obtained.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 3290-3301 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Excited state intramolecular and intermolecular proton transfer reactions in cold, isolated 2-allylphenol, 2-propenylphenol and 2-propylphenol, and their clusters with water and ammonia are investigated employing a combination of spectroscopic techniques (mass resolved excitation, threshold photoionization, dispersed emission), a semiempirical calculation (MOPAC 5) and a potential energy calculation of cluster structure. Threshold photoionization spectroscopy proves to be useful for the identification of molecular conformers in these systems but has mixed results for the identification of proton transfer in their clusters. The total collection of generated data suggests the following conclusions: (1) isolated, cold 2-allylphenol displays only one conformation which appears to have a significant stabilizing intramolecular interaction between the allyl group double bond and the hydroxyl group hydrogen atom; (2) 2-propenylphenol displays only one conformer; (3) 2-propylphenol has many conformations—probably more than five under the experimental conditions; (4) no evidence of intramolecular proton transfer can be found for these three isolated cold molecules; (5) no evidence for intermolecular proton transfer in water clusters has been found by any of the above techniques; and (6) evidence is found for intermolecular proton transfer in 2-allyl- and 2-propenylphenol(NH3)n, n≥3, in dispersed emission spectra. Dispersed emission spectra of 2-propylphenol(NH3)n n≥3 are too weak to yield conclusive evidence for intermolecular excited state proton transfer. Potential energy minimization calculations of cluster geometry suggest that the difference between water and ammonia cluster behavior with regard to proton transfer arises because water molecules hydrogen bond with the hydroxyl group (both OH⋅⋅⋅OH2 and HO⋅⋅⋅HOH) and each other while ammonia molecules are more evenly distributed over the entire molecular structure of the phenol moiety. Apparently, for efficient proton transfer to occur in clusters, the proton affinity of the solvent must be large and both the anion and the proton must be well solvated (stabilized) by the solvent.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 266-274 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The validity of the analytic large aspect ratio, high-β equilibria developed by Cowley et al. [Phys. Fluids B 3, 2066 (1991)] is extended to include finite aspect ratio equilibria with q2(very-much-greater-than)1, where q is the safety factor. These high-β equilibria have two regions. Most of the volume lies in the "core region,'' where ψ=ψ(R). The flux surfaces close in the "boundary layer region,'' which has thickness δ. The solutions are valid when δ/a∼O ((square root of)ε/βq2) is small, where a is the minor radius. Thus, finite ε is allowed when q2 is large. The equilibria are completely specified by the midplane profiles of pressure p(R) and poloidal magnetic field BP(R) and the shape of the plasma boundary, all of which can be measured experimentally. Note the departure from customary specification of p(ψ), q(ψ), or F(ψ). A fast numerical code, requiring a few seconds to execute, has been written to compute and illustrate the analytic high-β equilibria. The qualitative features of high-βP tokamaks are discussed in detail. © 1996 American Institute of Physics.
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  • 5
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion heating and acceleration has been studied in the well-characterized reconnection layer of the Magnetic Reconnection Experiment [M. Yamada et al., Phys. Plasmas 4, 1936 (1997)]. Ion temperature in the layer rises substantially during null-helicity reconnection in which reconnecting field lines are anti-parallel. The plasma outflow is sub-Alfvénic due to a downstream back pressure. An ion energy balance calculation based on the data and including classical viscous heating indicates that ions are heated largely via nonclassical mechanisms. The Ti rise is much smaller during co-helicity reconnection in which field lines reconnect obliquely. This is consistent with a slower reconnection rate and a smaller resistivity enhancement over the Spitzer value. These observations show that nonclassical dissipation mechanisms can play an important role both in heating the ions and in facilitating the reconnection process. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 1837-1837 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1770-1770 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Molecular Spectroscopy 136 (1989), S. 157-168 
    ISSN: 0022-2852
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Molecular Spectroscopy 132 (1988), S. 550-553 
    ISSN: 0022-2852
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Molecular Structure 16 (1973), S. 125-138 
    ISSN: 0022-2860
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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