Publication Date:
2015-12-24
Description:
Here, we propose a strain gauge based on single-layer MoSe 2 and WSe 2 and show that, in these materials, the strain induced modulation of inter-valley phonon scattering leads to large mobility changes, which in turn result in highly sensitive strain gauges. By employing density-functional theory bandstructure calculations, comprehensive scattering models, and the linearized Boltzmann equation, we explain the physical mechanisms for the high sensitivity to strain of the resistivity in single-layer MoSe 2 and WSe 2 , discuss the reduction of the gauge factor produced by extrinsic scattering sources (e.g., chemical impurities), and propose ways to mitigate such sensitivity degradation.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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