Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 2085-2087
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Au/n-WSe2 Schottky junctions usually exhibit linear dark current-voltage characteristics, apparently dominated by structural defects, and low open circuit photovoltages. After treatment of the WSe2 with polyiodide in a liquid junction configuration and subsequent deposition of Au, good diode characteristics and high Voc are obtained which are similar to those exhibited by WSe2/polyiodide liquid junctions. The role of the polyiodide treatment is ascribed to defect passivation. The barrier height of the WSe2/Au junction (∼1.0 eV) is particularly high for a semiconductor of Eg=1.2 eV and supports recent work which claims that MoS2 (similar structure to WSe2) forms Schottky junctions which behave close to the Schottky limit.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101510
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