Publication Date:
2019
Description:
〈p〉High-temperature operation of semiconductor devices is widely demanded for switching/sensing purposes in automobiles, plants, and aerospace applications. As alternatives to conventional Si-based Schottky diodes usable only at 200°C or less, Schottky interfaces based on wide-bandgap semiconductors have been extensively studied to realize a large Schottky barrier height that makes high-temperature operation possible. Here, we report a unique crystalline Schottky interface composed of a wide-gap semiconductor β-Ga〈sub〉2〈/sub〉O〈sub〉3〈/sub〉 and a layered metal PdCoO〈sub〉2〈/sub〉. At the thermally stable all-oxide interface, the polar layered structure of PdCoO〈sub〉2〈/sub〉 generates electric dipoles, realizing a large Schottky barrier height of ~1.8 eV, well beyond the 0.7 eV expected from the basal Schottky-Mott relation. Because of the naturally formed homogeneous electric dipoles, this junction achieved current rectification with a large on/off ratio approaching 10〈sup〉8〈/sup〉 even at a high temperature of 350°C. The exceptional performance of the PdCoO〈sub〉2〈/sub〉/β-Ga〈sub〉2〈/sub〉O〈sub〉3〈/sub〉 Schottky diodes makes power/sensing devices possible for extreme environments.〈/p〉
Electronic ISSN:
2375-2548
Topics:
Natural Sciences in General
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