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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied microbiology and biotechnology 6 (1979), S. 351-359 
    ISSN: 1432-0614
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Summary A mixed microbial culture, enriched from sewage sludge, was cultivated on a glucose medium in a high turbulence fermentor at constant temperature, pH and loading rate. Effects of high pCO2 (0.95 atm) and pCH4 (0.90 atm) were compared to those of low pCO2 (0.05 atm) and pCH4 (0.05 atm). Generally, rapid in creases in pCO2 resulted in rapid decreases in methane production and, conversely rapid decreases in pCO2 by N2-sparging resulted in rapid increases in methane production. Decreased values of methane production were also accompanied by acetic acid accumulation. No inhibiting effects of high pCH4 were detected. A method to obtain low pCO2 by gas recycling combined with CO2-absorption is proposed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    European journal of clinical pharmacology 42 (1992), S. 413-421 
    ISSN: 1432-1041
    Keywords: Platelet aggregability ; Metoprolol ; mental stress ; adrenaline ; β-adrenoceptor blockade ; TxB2 ; prostacyclin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary The possibility that β-adrenoceptor blockers, especially β1-selective agents might inhibit platelet function is of considerable interest, as this might be of pathophysiological importance in cardiovascular diseases. Platelet function, however, is difficult to assess and in vivo related data are scarce. The effect of one week of treatment with metoprolol 200 mg/day on platelet aggregability during mental stress (colour word conflict test; CWT) and low and high dose adrenaline infusions has been evaluated in a double-blind, placebo-controlled, cross-over study in 10 healthy male volunteers. Platelet function in vivo was assessed using ex vivo filtragometry, and the urinary excretions of β-thromboglobulin (HMW β-TG) and 11-dehydro-TxB2 (a thromboxane metabolite). Conventional in vitro aggregometry and the urinary levels of 2,3-dinor-6-keto-PGF1α (a prostacyclin metabolite) were also studied. During the interventions there was increased platelet aggregability in vivo, as filtragometry readings were shortened by 41±11% during high dose adrenaline infusion, urinary HMW β-TG levels increased and urinary 11-dehydro-TxB2 tended to increase. In contrast, platelet sensitivity to ADP in vitro was reduced. The urinary 2,3-dinor-6-keto-PGF1α levels were increased during the interventions. Despite the cardiovascular and biochemical signs of β-adrenoceptor blockade at rest and during the interventions, metoprolol failed to influence platelet function in vivo, as measured by ex vivo filtragometry, or urinary HMW β-TG or 11-dehydro-TxB2 levels. It tended rather to enhance the stress response measured by ex vivo filtragometry. Platelet aggregability in vitro and urinary 2,3-dinor-6-keto-PGF1α levels were not altered by metoprolol. Thus, metoprolol was not found to reduce platelet aggregability in healthy male volunteers either at rest or during sympatho-adrenal activation. The effect of treatment may still differ in patients; studies in patients with ischaemic heart disease are under way.
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Molecular Basis of Disease 1181 (1993), S. 257-260 
    ISSN: 0925-4439
    Keywords: Cobalt ; Glutathione peroxidase ; Superoxide dismutase ; α-Tocopherol
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 0003-2697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Development Economics 14 (1984), S. 395-405 
    ISSN: 0304-3878
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Political Science , Economics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1772-1774 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality, strained Si/Si1−xGex layered structures have been grown at temperatures in the range 400–625 °C, using a solid-source molecular-beam epitaxy (MBE) system with a mass-spectrometry-based loop-control to improve the accuracy and stability of the evaporation rates. Good control of the growth parameters has been achieved as verified by, e.g., high-resolution x-ray diffraction. Very high intensities and extremely small peak widths, down to 2.7 meV for the XNP transition at low excitation levels of photoluminescence spectra, indicate high crystalline quality of the layers. It is shown that some previously reported defect-related luminescence from MBE-grown SiGe layers is not intrinsic to the MBE process. © 1994 American Institue of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1442-1444 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice parameter variations in strained Si1−xGex/Ge (x〈0.23) induced by high-temperature annealing in the range 700–1000 °C, were determined by x-ray high-resolution reciprocal lattice mapping of the crystal structure. In the range 700–800 °C, the strain relaxation was found to increase by one order of magnitude owing to glide propagation of misfit dislocations, with an activation energy of 2.3 eV. In the range 850–1000 °C, relaxation was still high but the increase with the temperature was limited by dislocation interactions.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 440-442 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the structural characterization of CoSi2/n-Si0.9Ge0.1/p-Si heterostructures. Silicon molecular beam epitaxy is combined with Co sputtering to obtain these structures. The strain in the Si1−xGex is investigated after the formation of the CoSi2 by using high-resolution x-ray diffraction mapping in reciprocal space and cross-sectional transmission electron microscopy. The results show that in order to keep the strain in Si1−xGex unaffected, a sacrificial Si layer is needed. It was possible to obtain transistor action, but with low-current gain (β).
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and microchemistry of CoSi2/Si1−xGex/Si(001) heterostructures, in which the Si1−xGex layers were grown by molecular-beam epitaxy (MBE) and the silicides formed by different postdeposition reaction paths, were investigated using a combination of high-resolution cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, and secondary-ion-mass spectrometry. In two of the three sample configurations investigated, Co was deposited either (S1) directly on a strained Si1−xGex layer or (S2) on a sacrificial MBE Si overlayer on Si0.9Ge0.1. In the third sample configuration (S3) Si1−xGex was grown on a Si(001) substrate containing a buried ion-implanted CoSi2 layer. Only in sample configuration S2 was it possible to obtain a fully strained nearly defect-free CoSi2/Si0.9Ge0.1 structure. A high density of threading dislocations, corresponding to ≈60% relaxation at the Si0.9Ge0.1/Si interface, was observed in S1 while S3, in addition to the dislocations, exhibited a pronounced faceting at the CoSi2/Si interface. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1411-1420 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si(001) structures, implanted with Sn at energy of 50 keV and with doses in the range 2–9×1015 cm−2, were investigated by multicrystal x-ray diffraction, reciprocal space mapping (RSM), high-resolution transmission electron microscopy, and secondary-ion-mass spectrometry (SIMS). For Sn doses up to 3.30×1015 cm−2, annealing at 600 °C for 30 min under dry N2 atmosphere resulted in recrystallization by solid-phase epitaxy (SPE) to a layer thickness of more than 50 nm. These SPE-grown layers were shown to be free of extended defects and Sn redistribution was negligible. As measured by x-ray diffraction, the Sn-induced strain in Si increased with the implant dose. From RSM measurements, this strain was shown to be tetragonal with negligible in-plane relaxation. Mosaicity and defect-related effects were shown to be negligible. Instead, limited thickness effects and strain variation due to the implantation profile appeared to be the major sources of the observed broadening in the diffraction peaks. The lattice expansion coefficient for Sn in Si was estimated from the measurements to be 2.5×10−24 cm3/atom. For Sn doses above 3.3×1015 cm−2, a reduction in the Sn-induced strain in Si was observed despite the fact that Sn concentrations were higher. In this high-dose regime, the SPE growth under the same annealing conditions was limited to ∼10 nm. The remainder of the structure showed a succession of layers dominated by twinned Si(001), polycrystalline Si, nanocrystalline Si:Sn, and an untransformed amorphous top layer. In addition, Sn redistribution was detected in the SIMS measurements at levels much higher than expected from trace-diffusivity values at the employed annealing conditions. The observed SPE retardation was related to the high concentrations of Sn in these structures. © 1995 American Institute of Physics.
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