AIP Digital Archive
The design, growth by metalorganic chemical vapor deposition, and processing of an In0.07Ga0.93As0.98N0.02 solar cell, with 1.0 eV band gap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6–0.8 μm, and solar cell internal quantum efficiencies 〉70% are obtained. Optical studies indicate that defects or impurities, from InGaAsN doping and nitrogen incorporation, limit solar cell performance. © 1999 American Institute of Physics.
Type of Medium: