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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial CeO2 buffer layers for YBa2Cu3O7−δ films on sapphire (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2942-2944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial CeO2 buffer layers and YBa2Cu3O7−δ thin films have been grown in situ on (11¯02) sapphire by electron beam evaporation. Buffer layers of only 20 nm thickness inhibit interdiffusion between YBa2Cu3O7−δ and Al2O3 as determined by depth profiling using x-ray photoelectron spectroscopy. The layers show smooth surfaces and narrow interfaces. High lattice perfection of the CeO2 layer has been shown by x-ray diffraction. Laue oscillations up to ninth order have been observed in thin CeO2 buffer layers on sapphire. We found only one epitaxial orientation with YBa2Cu3O7−δ (001) (parallel) CeO2 (001) (parallel) Al2O3 (11¯02) and YBa2Cu3O7−δ [110] (parallel) CeO2 [100] (parallel) Al2O3 [112¯0]. YBa2Cu3O7−δ films grown on these buffer layers reveal Tc=88±0.5 K, ρ(300 K)=380 μΩ cm, and jc(77 K, 0 T)=1.3×106 A/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354650
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  • 2
    Electronic Resource
    Electronic Resource
    Thin YBa2Cu3O7−δ films by electron-beam coevaporation— Growth and in situ characterization (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2032-2034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the in situ preparation and characterization of thin YBa2Cu3O7−δ films on various substrates. The films were grown by electron-beam coevaporation of the pure metals Y, Ba, and Cu. A pressure stage is used to obtain high partial O2 pressure close to the substrate and low pressure in the main vacuum system. In situ resistance measurements were performed to investigate growth dynamics during film formation, and temperature dependence during the cool down from T≈1000 K to T≤Tc. The films were analyzed by R(T), ac susceptibility, x-ray diffraction, and critical transport current measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353147
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  • 3
    Electronic Resource
    Electronic Resource
    Compositional effects in YxBayCuzO7−δ thin films prepared by metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 633-635 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on effects of composition onto superconducting and structural properties of Y-Ba-Cu-O thin films, prepared by a carrier-gas free metalorganic chemical vapor deposition technique. Thin films with critical temperatures Tc≥90 K, transition widths ΔTc≤1 K, and critical current densities jc (T=77 K, B=0 T)≥106 A/cm2 can be prepared by this method. Here we report on a strong dependence of the Tc on the ratio of Ba/Cu. For Ba/Cu〈2 the surfaces show CuO precipitates, increasing in quantity and size with increasing concentration of Cu. An excess of Y leads to oriented inclusions of cubic Y2O3. A deficit of Y and Cu causes an expansion of the c-lattice parameter. To investigate the influence of Y2O3 and CuO precipitates on the pinning potential, resistive transitions in magnetic fields up to 12 T were measured and interpreted by a thermal activated flux-creep model. These measurements indicate the inefficiency of both, inclusions and precipitates, on the enhancement of the pinning potential.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108878
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  • 4
    Electronic Resource
    Electronic Resource
    Carrier gas-free chemical vapor deposition technique for in situ preparation of high quality YBa2Cu3O7−δ thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 869-871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new carrier gas-free metalorganic chemical vapor deposition technique was developed yielding a high deposition rate. The β-dicetonate precursor compounds were synthesized with reproducible water content which is of great importance for their vapor pressure. With the technique described above c-axis oriented YBa2Cu3O7−δ thin films were prepared with Tc(R=0)=91.8 K and jc(77 K)=1.3×106 A/cm2 on (100)SrTiO3 substrates and Tc(R=0)=91.1 K and jc(77 K)=3×105 A/cm2 on (100)MgO substrates at B=0 T. The influence of the metal composition on the formation of precipitation was studied by SEM investigations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105263
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  • 5
    Electronic Resource
    Electronic Resource
    Evidence for a new Hume-Rothery phase with an amorphous structure (1983)
    Springer
    The European physical journal 53 (1983), S. 15-26 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract It will be shown that binary amorphous alloys with a noble metal and a polyvalent non-transition element, as constituents, can be described essentially as a Hume-Rothery phase. Some structural as well as transport properties depend on $$\bar Z$$ , the average number of the conduction electrons per atom. A strong similarity between the amorphous and the corresponding liquid alloys was found. Alloys of the type mentioned can exist in a homogeneous amorphous phase within a concentration range which is limited on the noble-metal rich side by $$\bar Z$$ =1.8 and on the other side by about 20 at% noble-metal content. The influence of the conduction electrons, manifested in the Friedel oscillations of the effective pair potentials, is responsible for structural and electronic transport properties. For amorphous and liquid alloys with $$\bar Z$$ =1.8 it is interesting to note thatk pe , the wave number at which the maximum in the structure factor occurs, is equal to 2k F , the diameter of the Fermi sphere. As far as we have determined, all amorphous alloys with $$\bar Z$$ =1.8 containing the same noble metal have the same crystallization temperature and the same Hall coefficient independent of the polyvalent element. The individual influence of the polyvalent constituents can only be seen with increasing $$\bar Z$$ .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01578243
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  • 6
    Electronic Resource
    Electronic Resource
    Resistivity and hall effect measurements on quenched condensed Sb-Au films (1979)
    Springer
    The European physical journal 35 (1979), S. 67-72 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Hall coefficients measured on quenched condensed Sb-Au films with a gold content between approximately 30 and 80 at % agree well with the results obtained in corresponding liquid Sb-Cu alloys. This supports the picture, that the films are formed in a liquidlike amorphous phase in agreement with recent structure measurements. The results can be described approximately with the free electron model. Deviations from this model, which occur at high gold concentrations, are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01322083
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  • 7
    Electronic Resource
    Electronic Resource
    Crystallization of amorphous metal films within and without magnetic field (1980)
    Springer
    The European physical journal 38 (1980), S. 43-47 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Assuming that the conduction electrons of an amorphous metal contribute to the binding, we investigate whether a magnetic field will influence the transition from the amorphous to the crystalline state. Measurements taken on amorphous Bi, Ga and Yb films show no change in the crystallization temperatures within an accuracy of ±0.1 K due to a magnetic field of 18.5 T parallel to the surface of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01321201
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  • 8
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    Surface Rupture of the November 2002 M7.9 Denali Fault Earthquake, Alaska, and Comparison to Other Strike-Slip Ruptures (2005)
    Earthquake Engineering Research Institute
    Details
    Publication Date: 2020-12-14
    Description: On November 3, 2002, a moment-magnitude (Mw) 7.9 earthquake produced 340 km of surface rupture on the Denali fault and two related faults in central Alaska. The rupture, which proceeded from west to east, began with a 40-km-long break on a previously unknown thrust fault. Estimates of surface slip on this thrust were 3-6 m. Next came the principal surface break, along 220 km of the Denali fault. There, right-lateral offset averaged almost 5 m and increased eastward to a maximum of nearly 9 m. Finally, slip turned southeastward onto the Totschunda fault, where dextral offsets up to 3 m continued for another 70 km. This three-part rupture ranks among the longest documented strike-slip events of the past two centuries. The surface-slip distribution supports and clarifies models of seismological and geodetic data that indicated initial thrusting followed by rightlateral strike slip, with the largest moment release near the east end of the Denali fault. The Denali fault ruptured beneath the Trans-Alaska oil pipeline. The pipeline withstood almost 6 m of lateral offset, because engineers designed it to survive such offsets based on pre-construction geological studies. The Denali fault earthquake was typical of large-magnitude earthquakes on major intracontinental strike-slip faults, in the length of the rupture, the multiple fault strands that ruptured, and the variable slip along strike.
    Description: Published
    Description: 565-578
    Description: open
    Keywords: Earth crust ; earthquakes ; faulting ; slip ; pipelines ; Denali fault ; Susitna Glacier fault ; Totschunda fault ; Surface rupture ; November 3, 2002 M7.9 earthquake ; Alaska ; 04. Solid Earth::04.04. Geology::04.04.01. Earthquake geology and paleoseismology
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
    Format: 1464275 bytes
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  • 9
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    Surface Rupture and Slip Distribution of the Denali and Totschunda Faults (2005)
    Details
    Publication Date: 2017-04-04
    Description: The 3 November 2002 Denali fault, Alaska, earthquake resulted in 341 km of surface rupture on the Susitna Glacier, Denali, and Totschunda faults. The rupture proceeded from west to east and began with a 48-km-long break on the previously unknown Susitna Glacier thrust fault. Slip on this thrust averaged about 4 m (Crone et al., 2004). Next came the principal surface break, along 226 km of the Denali fault, with average right-lateral offsets of 4.5–5.1 m and a maximum offset of 8.8 m near its eastern end. The Denali fault trace is commonly left stepping and north side up. About 99 km of the fault ruptured through glacier ice, where the trace orientation was commonly influenced by local ice fabric. Finally, slip transferred southeastward onto the Totschunda fault and continued for another 66 km where dextral offsets average 1.6–1.8 m. The transition from the Denali fault to the Totschunda fault occurs over a complex 25-km-long transfer zone of right-slip and normal fault traces. Three methods of calculating average surface slip all yield a moment magnitude of Mw 7.8, in very good agreement with the seismologically determined magnitude of M 7.9. A comparison of strong-motion inversions for moment release with our slip distribution shows they have a similar pattern. The locations of the two largest pulses of moment release correlate with the locations of increasing steps in the average values of observed slip. This suggests that slipdistribution data can be used to infer moment release along other active fault traces.
    Description: Published
    Description: S23–S52
    Description: reserved
    Keywords: Surface Rupture ; Slip Distribution ; Denali fault ; Totschunda fault ; 3 November 2002 M 7.9 Earthquake ; Alaska ; 04. Solid Earth::04.04. Geology::04.04.01. Earthquake geology and paleoseismology
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
    Format: 2137599 bytes
    Format: application/pdf
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  • 10
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    Fluorescence fromXtraps inC60single crystals (1994)
    American Physical Society
    Details
    Publication Date: 1994-04-18
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
    Published by American Physical Society
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