Impurities: concentration, distribution, and gradients
Doping and impurity implantation in germanium and silicon
Interaction between different crystal defects
Calculations of total electronic binding energy
other γ-ray spectroscopy
Springer Online Journal Archives 1860-2000
Summary Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing119Sb→119Sn source Mössbauer spectroscopy and a low-energy H implantation technique. In addition to a visible component, we observe a large decrease of the Mössbauer intensity associated with the trapping of hydrogen, even at low temperatures. This is interpreted as the formation of a component with a negligible recoilless fraction. The different Mössbauer components were studied as a function of H dose, H-implantation temperature and annealing temperature. The data show that the visible component is associated with the well-known SbH complex, whereas the invisible component is associated with the formation of SbH n (n≥2) complexes. We show that these complexes are in thermal equilibrium with a larger hydrogen reservoir (H 2 * ), which governs their thermal stability. No Sb-H complexes are observed inp-type Si after H-implantation, in agreement with the current belief that hydrogen has a deep donor level in the gap. The microscopic structure of the various Sb-H and Sn-H complexes was studied with first-principles calculations using the pseudopotentialdensity-functional approach. The structure of the Sb-H complex is found to be similar to the P-H complex, with the H in an antibonding site of a Si atom neighbouring the Sb impurity. For SbH2 three configurations are found with energies differing by less than ≈ 0.1 eV. We find that the reaction SbH+H≠SbH2 is exothermic. We argue that the SbH2 complexes are shallow donors, irrespective of the structure. Therefore, the formation of SbH2 may depassivate the sample.
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