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  • 1
    Electronic Resource
    Electronic Resource
    Phosphoryl Chloride Enhancement of Fluorescence and Absorbance of Estrogens in Sulfuric Acid (1959)
    s.l. : American Chemical Society
    Analytical chemistry 31 (1959), S. 1693-1696 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60154a047
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  • 2
    Electronic Resource
    Electronic Resource
    Photoionization mass spectrometric studies of SiHn (n=1–4) (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 1235-1248 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A photoionization mass spectrometric study of SiH4 at T=150 K reveals the presence of SiH+4 with an adiabatic threshold at 11.00±0.02 eV. The implications for the structure of this Jahn–Teller split state are discussed. The appearance potentials of SiH+2 and SiH+3 are 11.54±0.01 eV and ≤12.086 eV, respectively. The reaction of F atoms with SiH4 generates SiH3 (X 2A1), SiH2 (X 1A1 and a 3B1), and SiH (X 2Π) in sufficient abundance for photoionization studies. The measured adiabatic ionization potentials (eV) are: SiH3, 8.01±0.02; SiH2 (X 1A1), 9.15±0.02 or 9.02±0.02; SiH2 (a 3B1), 8.244±0.025; SiH, 7.91±0.01. The singlet–triplet splitting in SiH2 is either 0.78±0.03 or 0.91±0.03 eV. The dissociation energy of SiH is 2.98±0.03 eV. A Rydberg series is observed, converging to SiH+ (a 3Π) at 10.21±0.01 eV. Heats of formation of the various neutral and ionic species are presented, as are the stepwise bond energies of SiH4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452213
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  • 3
    Electronic Resource
    Electronic Resource
    A photoionization study of SeH and H2Se (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 4815-4824 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photoion yield curve of SeH, prepared by the reaction H+H2Se is presented. The adiabatic I.P. is 9.845±0.003 eV, and autoionization structure is observed, from which higher I.P.'s are inferred. The photoion yield curves of H2Se+, SeH+, and Se+ from H2Se are also measured. The fragmentation thresholds, together with I.P. (SeH), enable one to infer the bond energies D0(HSe−H)=78.99±0.18 kcal/mol and D0(SeH)=74.27±0.23 kcal/mol. The adiabatic I.P. for H2Se (X˜ 2B) is 9.886±0.003 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451715
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  • 4
    Electronic Resource
    Electronic Resource
    The ionization potentials of CH4 and CD4 (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 674-676 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adiabatic ionization potential of CD4 is measured by photoionization mass spectrometry to be 12.658±0.015 eV, which is 0.05±0.02 eV higher than that of CH4. The difference is attributed to zero point energy differences, rather than different Jahn–Teller stabilization energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452268
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  • 5
    Electronic Resource
    Electronic Resource
    Ascorbic Acid Supplements and Blood Pressure (1992)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 669 (1992), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1992.tb17118.x
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  • 6
    Electronic Resource
    Electronic Resource
    Is Africa different?
    Amsterdam : Elsevier
    World Development 21 (1993), S. 2017-2028 
    Details
    ISSN: 0305-750X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geography , Political Science , Sociology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-750X(93)90073-I
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  • 7
    Electronic Resource
    Electronic Resource
    Bank lending to third world countries in the 1980's
    Amsterdam : Elsevier
    Journal of Banking and Finance 7 (1983), S. 553-558 
    Details
    ISSN: 0378-4266
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-4266(83)90012-2
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  • 8
    Electronic Resource
    Electronic Resource
    A new formulation of the resistive magnetohydrodynamics stability problem for finite β toroidal plasmas (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 4070-4083 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach to the study of linear resistive magnetohydrodynamics stability is described. The approach is based on the traditional toroidal plasma model where the plasma resistivity and mass effects are essential only in thin layers around resonance surfaces, whereas the outer plasma is ideal and inertia free. This leads to differential equations with singular points. A new technique to solve these equations is proposed and it is shown that it has superior numerical convergence and accuracy properties to previous methods. The new technique is generally applicable to other problems in which differential equations with singular points arise. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289688
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  • 9
    Electronic Resource
    Electronic Resource
    Dopant redistribution during the solid-phase growth of CrSi2 on Si(100) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4187-4193 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of an investigation into the redistribution of dopants—As, B, and P—during the solid-phase reaction of Cr with Si substrates to form CrSi2 are presented. Cr layers, 47 nm thick, were evaporated onto B-doped Si substrates which had previously been implanted with one of the three dopants. Two implant doses were investigated for each dopant. Following heat treatment at 500 °C, doping profiles were determined by secondary-ion mass spectrometery (SIMS) and, for arsenic-doped samples, by Rutherford backscattering spectroscopy (RBS). Both SIMS and RBS were also used to measure the extent of silicide formation. The results demonstrate that B and P are transported from the Si substrate to the surface of the growing CrSi2 layer while As accumulates at the CrSi2/Si interface. The silicide formation reaction is shown to be inhibited by large As concentrations. No other dopant-concentration-related effects were observed. A model, based on dopant segregation driven by the relative free energies of CrSi2 and Cr-dopant compounds, is proposed to explain the results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341333
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  • 10
    Electronic Resource
    Electronic Resource
    Growth, structure, and physical properties of single-phase metastable fcc Cu1−xCrx solid solutions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3689-3696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-phase fcc-structure metastable Cu1−xCrx alloys have been grown with Cr concentrations of up to 23 at. %. The films, which were typically 1.5–3 μm thick, were deposited by rf co-sputter deposition onto glass and oxidized-Si substrates at temperature between 55 and 180 °C. The average grain size of alloys grown at 90 °C was ∼100 nm. The lattice parameter of Cu1−xCrx was found to increase linearly with x resulting in an effective fcc Cr radius, in solution, of 0.1332 nm. ∼7% larger than the elemental bcc Cr bonding radius. The room-temperature resistivity of these alloys also increased linearly with x at a rate of 2.8 μΩ cm per at. % Cr. This high differential resistivity was due, in addition to simple alloys scattering, to scattering of conduction electrons into virtual bound states associated with the Cr atoms. Cu0.9Cr0.1 alloys were found to be stable for 24-h anneals at temperatures up to ∼300 °C. From an analysis of x-ray diffraction peak positions and widths as a function of both growth and annealing temperatures, we conclude that the reaction path for the phase transition from the metastable to the equilibrium state involves first the precipitation of coherent fcc Cr particles followed by a transformation to bcc Cr as phase separation continues. The oxidation rate of Cu0.9Cr0.1 was found to be much less that that of pure Cu. At an annealing temperature of 250 °C, the oxide thickness tox on Cu0.9Cr0.1 saturated at J25 nm after 1 h while tox on Cu continued to increase parabolically with time from ∼60 nm at 1 h to 140 nm at 4 h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341412
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