ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage(BVCEO) of 1200 V, a maximum current gain (β) of 60 and the low on-resistance (Rsp_on)of 5.2mΩcm2. The high gain is attributed to an improved surface passivation SiO2 layer which was grown inN2O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N2O ambientshow less emitter size dependence than reference SiC BJTs, with conventional SiO2 passivation, dueto a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm × 1.8 mmshowed a current gain of 53 in pulsed mode and a forward voltage drop of VCE=2V at IC=15 A(JC=460 A/cm2)
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1151.pdf
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