ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The temperature and pressure dependences of photoconductivity, the photoelectromagnetic effect, dark electrical conductivity, and the Hall coefficient in p-CdxHg1−x Te samples with x≈0.20–0.22 were measured at low temperatures. It is shown that recombination transitions in the temperature region of T〈30–40 K may be interpreted in the context of the two-level Shockley-Read model with allowance made for the freezing-out of majority charge carriers (holes). Furthermore, the second recombination center, which manifests itself only in the aforementioned temperature region, is an acceptor of a non-Coulomb type with an ionization energy of about 10–15 meV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1317571
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