ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have used depth-resolved cathodoluminescence and Auger electron spectroscopies,DRCLS and AES, respectively, to probe the electronic structure and the composition of Ti/Alohmic contacts to p-type SiC on a nanometer scale. A continuous Ti-Si-C compound layer wasobserved using the Auger depth profile. No interfacial Al segregation was found. The secondaryelectron threshold technique showed a continuous decrease in work function from the p-type SiC tothe Ti-Si-C compound layer. Our results support an ohmic contact mechanism by an intermediatesemiconductor layer which reduces the otherwise large interfacial Schottky barrier height. DRCLSrevealed a ~2.78 eV sub-band gap transition enhanced by interfacial reaction in the near-interfaceSiC, suggesting the formation of additional C or Si vacancies
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.891.pdf
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