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  • 1
    Electronic Resource
    Electronic Resource
    Reply to the "Comment on silane pyrolysis and the insertion of silylene into molecular hydrogen'' (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 3059-3060 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452016
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  • 2
    Electronic Resource
    Electronic Resource
    Reaction mechanism and kinetics of silane pyrolysis on a hydrogenated amorphous silicon surface (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 3623-3630 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Three regimes of pressure and temperature are identified in which silane pyrolysis has distinctly different initial kinetics: in two regimes the initial reactions are heterogeneous and in the third regime it is homogeneous. We report here a preliminary model for the heterogeneous reaction regime where the decomposition rate is nearly independent of pressure. In the model the silicon surface is saturated with hydrogen and hence is nonreactive. The rate limiting step for silane decomposition is the creation of reactive surface sites by release of hydrogen. These reactive sites are refilled by decomposition of SiH4 or reincorporation of H2. A new adsorbed state of SiH4 is proposed which is bound to the surface by a three-center bond. After making some simplifications to the full model the kinetics are solved for static- and flowing-gas hot wall reactor experiments. The implications of the proposed reactions for the other two pyrolysis regimes and for silane discharges are briefly discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.450933
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  • 3
    Electronic Resource
    Electronic Resource
    Nanoscale study of the as-grown hydrogenated amorphous silicon surface (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 91-100 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope has been used to study the topography of the as-grown surface of device-quality, intrinsic, hydrogenated amorphous silicon deposited by rf discharge from silane. The substrates were atomically flat, oxide-free, single-crystal silicon or gallium arsenide. No evidence for island formation or nanoscale irregularities was seen in studies of 100-A(ring)-thick films on either silicon or gallium arsenide. The topography of 1000- and 4000-A(ring)-thick films has much variation; many regions can be characterized as "rolling hills,'' but atomically flat areas have also been observed nearby. Generally, it appears that surface diffusion plays a role in smoothing the film topography. In most regions, the observed slopes were 10% or less from horizontal, but some steep-sided valleys, indicating incipient voids, were observed. The effect of the finite size of the scanning tunneling microscope probe tip is considered; this has an effect on the observed images in some cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355203
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  • 4
    Electronic Resource
    Electronic Resource
    Germane discharge chemistry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4169-4177 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stable gas products of germane dissociation and subsequent radical reactions have been measured in pure germane glow discharges characteristics of the initial germane fragmentation are inferred from these data. The spatial distribution of discharge optical emission, and of film deposition on glass fibers, have also been measured. Finally, the surface reaction probability β of depositing neutral radicals has been measured to be 0.61±0.09 on the grounded electrode. Major differences between germane and silane discharges occur in all these observables. Possible explanations of these differences are given, but much less chemical data exists for germane, thereby precluding definitive judgments. A probable cause of the normally much poorer semiconductor quality of a-Ge:H films, compared to a-Si:H, is suggested. This is based on the thermodynamics of the H2 release reaction at the growing surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348384
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  • 5
    Electronic Resource
    Electronic Resource
    Small particle growth in silane radio-frequency discharges (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1076-1085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Particle size and number density are measured versus discharge operating time (t) in pure silane, capacitively coupled rf discharges. Discharge conditions are those typically used to produce amorphous silicon devices, except the temperature is 300 K. Particle radii (Rp) from 4 to 25 nm are observed, where Rp is determined from the rate of particle diffusive loss in the plasma afterglow. The scattered light intensity then yields the particle number density. We generally observe a Rp(t) consistent with initial rapid growth to Rp∼2 nm, followed by a constant dRp/dt at a rate consistent with growth due to SiH3 reactions. However, at higher pressures and film growth rates, or rf voltage, the particle growth rate exceeds that due to SiH3, indicating additional growth mechanisms. Particle density increases orders of magnitude when pressure and rf voltage increase by small amounts. Measurement of the particle spatial distribution in the afterglow, when most particles are neutral, shows that they have sufficient sticking probability on the upper electrode to yield essentially equal deposition on both electrodes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371982
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  • 6
    Electronic Resource
    Electronic Resource
    Plasma charge-density ratios in a dusty plasma (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1086-1090 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that particle diffusion in the afterglow of a dusty plasma can be used to establish several properties of the active plasma. Specifically, the ratio of the average mass of light negative and positive ions, and a limit for the ratio of electron to ion charge densities can be determined. From the afterglow decay of visible particles, with and without electrode bias, the charged fraction of particles can be measured. An afterglow ambipolar-diffusion model is developed to relate this neutral fraction to the densities and masses of electrons and light ions in the active plasma. We then use this technique to analyze a silane radio-frequency plasma. In the active plasma positive charge is dominated by small SiyHn+ cations, and the negative charge by small SixHm− anions, with x and y〈100. This analysis establishes that the electron density is less than 10% of the ion density in the operating discharge and that the anion/cation average mass ratio (x/y) is ∼6. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371983
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  • 7
    Electronic Resource
    Electronic Resource
    Optical heterodyne detection at a silver scanning tunneling microscope junction (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1311-1316 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 435 MHz beat signal between two modes of a He–Ne laser (633 nm) has been detected in the current of a scanning tunneling microscope (STM), using a silver probe to enhance the sensitivity using its plasmon resonance. The difference frequency between this optical beat and a radio frequency voltage applied to the junction has also been detected in the STM current. The difference frequency and heterodyne signals, as well as the direct current (dc) probe expansion, fit a calculation of modulated and dc thermal expansion of the probe tip, once one assumes that a surprisingly large fraction of the laser beam is absorbed at a small structure at the probe end. The beat signal due to current rectification is not observed for the experimental conditions, but the potential for utilizing the plasmon resonance to obtain such a signal using a silver probe is evaluated for other, feasible conditions where it might provide exceptional sensitivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369332
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  • 8
    Electronic Resource
    Electronic Resource
    A discharge lamp based on MgH radiation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5365-5371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the efficacy and spectrum of an inductively-coupled, radio-frequency discharge in mixtures of magnesium (Mg), hydrogen (H2), and argon vapor. The predominantly green emission is dominated by the A–X band of MgH, plus some Mg lines. The discharge operates in a frit-sealed, ∼600 °C alumina cell with a sapphire window, at pressures of 200–600 Pa. The plasma impedance is established from the impedance of the matching network parameters, and the electron temperature is determined from line intensity ratios. Assuming isotropic emission, a maximum energy efficiency (η) of ∼ 10% (efficacy ∼ 90 lm per watt) is achieved, where η is the ratio of visible emission to power delivered to the matching network. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371533
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  • 9
    Electronic Resource
    Electronic Resource
    Neutral radical deposition from silane discharges (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2406-2413 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fractional contributions of the various SiHn radicals (n=0–3) to deposition are calculated for low-power, pure-silane rf and dc discharges. This is done using a radical diffusion plus reaction equation, combined with current knowledge of SiH4 dissociation fractionation, of SiHn+SiH4 reactions, and of the distributed source of radicals. The conclusion reached is that more than 98% of neutral radical deposition is by SiH3 for typical deposition pressures (〉100 mT at 240 °C). The effect of SiH3+SiH3 reactions at higher power is also evaluated using an estimated reaction rate coefficient (k3). The resulting loss in deposition rate is given as a function of film growth rate and of k3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341034
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  • 10
    Electronic Resource
    Electronic Resource
    Mono- and disilicon radicals in silane and silane-argon dc discharges (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3402-3411 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of monosilicon (SiHn) and disilicon (Si2Hn) radicals at the cathode surface of dc discharges in silane and silane-argon mixtures are reported. Silyl radical density per decomposed silane was constant for fixed flow conditions over a range of powers and silane-argon ratios. The relative densities for other monosilicon radicals SiHn/SiH3 decreased with increased fraction of silane in silane-argon mixtures. The density of disilicon radicals was observed to be comparable to some of the monosilicon radicals, with Si2H2 and Si2H4 the dominant Si2Hn species. Formation and destruction reactions are discussed for these radicals, disilane, and the deposited film. We deduce that disilane is formed primarily on surfaces and that sputtering is a significant source for radicals near the cathode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336806
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