Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 3637-3639
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A high frequency capacitance-voltage method is used to measure the electronic gap-state density in diamond-like carbon (DLC) films. The gap-state density is derived from the analysis of high frequency capacitance-voltage characteristics of DLC on crystalline silicon (c-Si) heterojunctions. Near the Fermi level the gap-state density in the DLC thin film is obtained of the order 1016 cm−3 eV−1. Furthermore, the energy-band diagram of a DLC/c-Si heterojunction is evaluated, and the work function of DLC is derived to be 3.6 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111955
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