ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Photoelectron spectra and molecular properties. LI. Ionization potentials of silanes SinH2n+2 (1976)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 98 (1976), S. 668-674 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00419a006
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    THE DEVELOPMENT OF A MODEL TO EVALUATE HYDROLOGIC RISK IN WATER RESOURCE SYSTEM DESIGN (1970)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 6 (1970), S. 0 
    Details
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: In this paper, a procedure for analyzing a water resource system with special emphasis on evaluation of acceptable economic risk due to occasional failures to deliver water is proposed. The basic methodology includes the development of a simple mathematical model which describes the physical hydrologic and economic characteristics of a single reservoir irrigation and city water supply system and an evaluation of economic benefits of the system with full and partial deliveries of water. The system is simulated for various combinations of decision variables (system magnitudes) and an optimum design is obtained by response surface technology. Emphasis is placed on the basic model and methodology although, in order to introduce some realism, the procedure is applied to data based on the existing reservoir system on the South Concho River in West Central Texas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1752-1688.1970.tb00508.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    A METHOD FOR INCORPORATING AGRICULTURAL RISK INTO A WATER RESOURCE SYSTEM PLANNING MODEL (1971)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 7 (1971), S. 0 
    Details
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: Prior studies of water resource systems have considered risk from the point of view that only the system planners could react to the effects of the risk elements. However, users of water from a system also react to risk. When the quantity of water that a system can supply is subject to considerable variation, the reactions of the users of the water will often effect the benefits generated by the system and thus its optimal design characteristics. A simulation model of a reservoir-irrigation system is developed which incorporates the water users' reactions to risk in such a manner as to reflect their influence on the optimal design characteristics. A risk (convex) programming algorithm is incorporated into the model to reflect the water users' reactions to various levels of aversion to risk and degree of uncertainty in water deliveries. Response surfaces are generated as a result of performing the simulation at different levels of the design variables. An examination of these surfaces reveals the importance of including water users' reactions to risk in water resource system planning. The effects of different levels of risk aversion on the irrigation farmers' choice of crop enterprises are also examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1752-1688.1971.tb05783.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    THE DEVELOPMENT OF A MODEL TO EVALUATE HYDROLOGIC RISK IN A WATER RESOURCE SYSTEM (1969)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 5 (1969), S. 0 
    Details
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: A technique is described for analyzing a water resource system whose inflow is highly variable. The use of this technique requires not only that a mathematical model be developed of the physical, hydrological, and economic characteristics of the water resource system under study, but also that the economic benefits of the system, including full and partial water deliveries for irrigation development, be evaluated. Although developed independently of and simultaneously with the recently in this article includes some significant departures, such as the development of a complex revenue-loss function and water-shortage statistical characteristics for various reservoir sizes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1752-1688.1969.tb00426.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    GaAs surface reconstruction obtained using a dry process (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2035-2037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report attaining Ga-terminated (4×2) surface reconstruction on virgin GaAs substrates using a completely dry process at temperatures below the oxide sublimation temperature and without group V overpressure. The native oxides are removed with an electron cyclotron resonance hydrogen plasma treatment, followed by annealing at 500 °C in ultrahigh vacuum, which yields a reconstructed surface suitable for epitaxial overgrowth. Characterization by secondary ion mass spectroscopy and transmission electron microscopy reveals the complete removal of O, reduced C, and high structural order at the epilayer/substrate interface when this preparation method is used before molecular beam epitaxy. Annealing the substrate at a lower temperature yields a nonreconstructed surface possessing significant impurity concentrations, and leads to dislocation defects at the epilayer/substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353148
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Interfacial characteristics of AlGaAs after in situ electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3105-3111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Regrown/processed AlGaAs interfaces using secondary ion mass spectrometry, cross section transmission electron microscopy (TEM), and reflection high energy electron diffraction have been characterized. Two sets of samples, GaAs/Al0.4Ga0.6As (with GaAs on top) and Al0.4Ga0.6As/GaAs (with Al0.4Ga0.6As on top), are used as starting materials. For the GaAs/Al0.4Ga0.6As samples that are first exposed to atmosphere, the experiment is performed in an integrated processing system where etching and regrowth chambers are linked together by ultrahigh vacuum transfer modules. The etching process includes electron cyclotron resonance (ECR) hydrogen plasma cleaning of GaAs native oxides, ECR SiCl4 plasma anisotropic deep etching into Al0.4Ga0.6As, and an optional, brief Cl2 chemical etching. Regrowth is carried out using solid-source molecular beam epitaxy (MBE). Despite the in situ processing, significant amounts of C, Si, and O impurities at the 10, 5, and 50×1012 cm−2 levels exist at the interfaces. However, the impurity level is one order of magnitude smaller than that in air-exposed, ECR plasma etched and MBE regrown Al0.4Ga0.6As/GaAs of the set 2 samples. As revealed using TEM, isolated small particles (presumably correlated to aluminium oxides) exist at the regrown/processed interface of the set 1 samples, but no other defects such as dislocation are seen. Impurities and defects are mainly caused by the high reactivity of AlGaAs during ECR plasma etching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356162
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2658-2660 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a novel dry process to remove the surface contaminants C, Si, and O from GaAs substrates. This method utilizes an electron cyclotron resonance hydrogen plasma to remove the native oxides, followed by a very brief Cl2 chemical etching of GaAs to further reduce C and Si residues, and a final vacuum anneal. Characterization by secondary ion-mass spectrometry (SIMS) typically reveals the removal of C, Si, and O at the overgrown/processed interface to the levels below the SIMS detection limit. The as-processed GaAs surface, a Ga-stabilized reconstructed (4×6), is atomically smooth, and is as clean as a surface of freshly grown GaAs epilayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109277
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial regrowth on in situ plasma-etched AlAs/AlGaAs heterostructures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1738-1740 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial regrowth by solid-source molecular beam epitaxy (MBE) on dry etched heterostructures possessing exposed AlAs surfaces is accomplished for the first time using a vacuum integrated processing. Samples composed of multilayers of AlAs and AlGaAs are patterned with a SiO2 mask and are anisotropically etched using a low damage electron cyclotron resonance (ECR) SiCl4 plasma process. Etched samples are transferred in ultrahigh vacuum between the ECR and MBE chambers to avoid atmospheric exposure before regrowth. Microstructural analysis of the overgrown layers by scanning and transmission electron microscopy indicates that epitaxial regrowth on both the etched field and vertical sidewalls is achieved. The regrown material is found to contain microtwin plates, but few dislocations, indicating the good quality of the overgrowth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107202
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    High-temperature operation of periodic index separate confinement heterostructure quantum well laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2784-2786 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature operation of the InGaAs/GaAs/AlGaAs quantum well lasers with an expanded vertical optical mode is demonstrated for the first time using a periodic index separate confinement heterostructure (PINSCH) laser. Continuous wave (cw) operation up to 145 °C is achieved with a coated 3 μm×508 μm PINSCH laser. The measured characteristic temperature (170 K) and external differential quantum efficiency (0.75 mW/mA) are comparable to those obtained in a graded index separate confinement heterostructure laser fabricated at the same time. These results illustrate the excellent capability of the PINSCH laser to compress the transverse beam divergence without sacrificing the electrical carrier confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105859
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 735-737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a method for the removal of AlxGa1−xAs native oxides for 0≤x≤1, prior to molecular beam epitaxial overgrowth. The oxides formed on epilayers of AlGaAs after atmospheric exposure are removed in an electron cyclotron resonance hydrogen plasma with a substrate temperature less than 400 °C. Reflection high energy electron diffraction indicates the plasma-prepared AlGaAs surface are oxide-free and crystalline; after a vacuum anneal to 250–500 °C, GaAs or AlGaAs are epitaxially overgrown on these surfaces. Secondary ion mass spectroscopy detects C, O, and Si impurities at the interfaces, where their concentrations increase with increasing Al content of the exposed surface. The quality of the interface and the overgrown film, as observed by transmission electron microscopy, are found to be better for lower interface impurity densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108854
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...