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  • 1
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Jj; 68.55.a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: T /nS of nT rearrangements and nS atoms in the spike volume as the crucial parameter characterizing the ability of a given ion–target combination to achieve complete rearrangement of the spike volume. nT/nS〉1 is the optimum condition for diamondlike film growth. For aC films the ion energy dependence of nT/nS agrees well with the measured sp3 bond fraction. For Ar+-ion-assisted deposition of aC we find nT/nS〉1 above 50 eV with no pronounced ion energy dependence. Furthermore, our model predicts optimum conditions for the formation of cubic boron nitride between 50 eV and 3 keV.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4237-4245 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth and the properties of (t)a-C:F films prepared by the deposition of mass separated 12C+ and 19F+ ions as a function of the F concentration. The films are always strongly F deficient due to the formation of volatile F2 and CFx molecules during the deposition process. A maximum F content of about 25 at. % is obtained for an ion charge ratio of C+:F+=1:1. The observed mechanical, optical, electrical, and structural properties as well as the thermal stability of the films are strongly influenced by the F content. A three step progression of the film structure is evident for increasing F concentration: the amorphous three-dimensional network of tetrahedrally bonded carbon atoms of pure carbon films (ta-C) with diamondlike properties is doped for very low F concentrations (ta-C:F). A further increase of the F content results first in transformation to a graphitelike amorphous structure (a-C:F) before the deposited films become porous and to a polymerlike one for the highest F content. © 2001 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3248-3254 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study we investigate the possibility of nucleating nanocrystalline cubic boron nitride (c-BN) thin films directly onto suitable substrates without the soft turbostratic BN (t-BN) interlayer that is usually observed. This would open a path to the epitaxial growth of c-BN films which is essential particularly for practicable applications in electronic devices. Appropriate substrates are required to exhibit a lattice that matches the c-BN crystallite structure, survives the ion bombardment imperative for c-BN film formation, and is not disturbed by the development of a heterogeneous interface layer. In accordance with these criteria, monocrystalline AlN is selected and employed as a potential substrate for direct c-BN film growth using mass selected ion beam deposition. A detailed examination of the BN/AlN interface microstructure by cross-sectional high-resolution transmission electron microscopy reveals that the AlN crystallinity is indeed retained, with no amorphous layer next to the BN film as commonly observed on Si substrates. Nanocrystalline BN grains with the cubic, and, more frequently, with the wurtzitic structure are found in direct contact with certain regions of the rugged AlN substrate, covering about one-third of its entire surface with no mediating t-BN or other interface layer. The c-BN and w-BN growth areas are textured and exhibit definite preferential orientation relationships with the faceted AlN substrate surface. The consequences of these findings for the understanding of the role of the t-BN interlayer in c-BN film nucleation are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1552-1554 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron nitride thin films were deposited at room temperature with various ion energies by mass selected ion beam deposition on cubic boron nitride (c-BN) previously nucleated on Si (100) substrates at a higher temperature. Selective area diffraction, electron energy loss, and infrared spectroscopy results reveal continued growth of the cubic phase. The reported temperature threshold of about 150 °C for c-BN film formation is therefore unmistakably related to the initial nucleation of c-BN, whereas the growth of c-BN appears to be temperature independent. The latter is in accordance with predictions of the cylindrical thermal spike growth model recently proposed by our group. © 1999 American Institute of Physics.
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