ISSN:
1572-9540
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract By means of π+/μ+ channelling, positive pions (π+) implanted intoTa, Mo, andW are investigated up to high temperatures. A striking observation is that the channelling effect disappears in a rather narrow temperature interval centred at 0.26 (Ta) to 0.51 (W) of the melting temperature. From studies of π+ trapping by oxygen atoms inTa estimates for the low-temperature π+ diffusivity inTa [D π(23K)=1.4·10−10±0.3 m2s−1,D π(47K)=5.7·10−10±0.3 m2s−1] as well as for the binding enthalpy of π+ to 0 atoms (H B=7·10−2 eV) have been obtained. The diffusion data are in reasonable agreement with the theory of phonon-assisted tunnelling.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02401564
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