Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 99-101
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
It is shown that Te can be used as a surfactant for the growth of highly strained InxGa1−xAs on GaAs(001). As observed by reflection high-energy electron diffraction analysis during growth, adsorption of Te on the GaAs surface prior to the growth of InxGa1−xAs drastically increases the layer thickness which can be grown in a two-dimensional layer-by-layer fashion. In analogy with the behavior of As and Sb as surfactant in the growth of Si/Ge [Copel, Reuter, Kaxiras, and Tromp, Phys. Rev. Lett. 63, 632 (1989)] Te is only slightly incorporated in the growing layer and floats at the surface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107626
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