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In this work, a capacitance–voltage (C–V) technique, based on a combination of measured and simulated C–V characteristics, was applied to characterize In0.35Ga0.65As/GaAs multiquantum-well laser structures at room temperature. A theoretical model, including the self-consistent solution of Poisson and Schrödinger equations, was developed to simulate the C–V characteristics and the carrier concentration profiles. Measured C–V carrier concentration profiles were used to obtain the average impurity concentration in active regions. The comparison between experimental and simulated results was used to determine the conduction band offset, yielding ΔEc/ΔEg(approximate)0.8. In the case of samples with postgrowth quantum-well intermixing, this technique was applied to extract the characteristic interdiffusion length. © 2000 American Institute of Physics.
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