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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 38 (1966), S. 51-53 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Archives of microbiology 161 (1994), S. 445-452 
    ISSN: 1432-072X
    Keywords: Key words: Halophilic Archaea –Haloferax– Aromatic-ring mineralization – Benzoate – Cinnamate – Phenylpropanoate – Oil brine
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract. A pink-pigmented halophilic Archaeon, Strain D1227, was isolated from soil contaminated with oil brine and shown to be a member of the genus Haloferax, based on: (1) its hybridization with a 16S rRNA probe universal for the Archaea; (2) its resistance to a broad spectrum of antibiotics that affect Bacteria; (3) its requirement for at least 0.86 M NaCl and 25 mM Mg2+ for growth; (4) its possession of C50-carotenoids characteristic of the halophilic Arachaea; (5) the thin layer chromatographic pattern of its polar lipids, which was identical to that of other species of Haloferax; and (6) its pleomorphic cell morphology. However, in contrast to the known species of Archaea, Haloferax strain D1227 was able to use aromatic substrates (e.g., benzoate, cinnamate, and phenylpropanoate) as sole carbon and energy sources for growth. Physiologically similar organisms, such as Haloferax volcanii, Haloferax mediterrani, Haloarcula vallismortis, and Haloarcula hispanica, could not grow on these aromatic substrates. When grown on 14C-benzoate, strain D1227 mineralized 70% of the substrate and assimilated 19% of the 14C-label into cell biomass. In addition to growth on aromatic substrates, D1227 was also capable of growth on a variety of carbohydrates and organic acids. Optimum growth of strain D1227 occurred at 45°C in media containing 1.7 – 2.6 M NaCl and 100 mM Mg2+. Under optimum growth conditions, the cell shape varied from that of an oblate spheroid on mineral salts medium alone, to disc-shaped, irregular or triangular cells on the same medium amended with yeast extract and tryptone. To our knowledge, this is the first unequivocal demonstration of the ability of an Archaeon to grow by mineralization of aromatic substrates, and it adds a new dimension to our appreciation of the physiological diversity of this group of prokaryotes.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 338-342 (May 2000), p. 1477-1482 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical prospecting 17 (1969), S. 0 
    ISSN: 1365-2478
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Physics
    Notes: A high resolution Boomer system was used to investigate the bedrock configuration of part of Port Jackson, New South Wales. The continuous reflection profiling technique was successful in delineating a channel incised in bedrock under a thickness of up to 60 m. of unconsolidated sediment covered by up to 20 m. of water.
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial and engineering chemistry 18 (1946), S. 365-370 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 40 (1936), S. 1149-1155 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1614-1616 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on selective area growth of AlGaAs from trimethylgallium, trimethylaluminum, and arsine by UV laser stimulated organometallic vapor phase epitaxy. Using a wavelength tunable pulsed laser system, we investigated the stimulation mechanism and wavelength dependence of the growth enhancement in the range from 235 to 255 nm. Adlayer photolysis constitutes the dominant stimulation mechanism at these wavelengths, since the observation of laser-induced, submicron periodic surface ripples restricts the growth enhancement to a surface process and laser enhanced pyrolysis can be excluded by temperature simulations. We observe an abrupt wavelength edge at 252 nm, below which the stimulation rate is constant and above which the growth enhancement ceases. The growth contrast under our experimental conditions is 3.2:1 and the selectively grown AlGaAs is of optical quality. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3741-3743 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short-period Ga0.51In0.49P/GaAsyP1−y strained superlattices were grown, by organometallic vapor phase epitaxy, with periods around 70 A(ring) and phosphorus compositions from 0.04 to 0.31. Ground state emission as high as 1.73 eV was observed. Model solid theory predictions fit this data well, particularly at lower P compositions. Type II structures were obtained for phosphorus compositions above 0.04. The introduction of phosphorus in the low bandgap regions of these superlattices was found to significantly improve their structural and optical quality. These superlattices provide, in many applications, a viable alternative to the quaternary alloy GaInAsP, which is required for obtaining these bandgaps in Al-free systems lattice-matched to GaAs. To our knowledge this is the first report on the growth and modeling of short-period superlattices using this material system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1821-1823 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of gas phase reactions between trimethylamine alane (TMAA), triethylgallium (TEG), and arsine on AlxGa1−xAs films grown by low pressure organometallic vapor phase epitaxy. The reactor used in this study provides for independent observation of the effects of TEG-TMAA and TMAA-arsine gas phase reactions. Gas phase reactions involving TMAA and TEG result in the formation of nonvolatile compounds upstream, which condense on the reactor wall, resulting in a reduction of growth rate and a degradation of the deposition uniformity. The TMAA-arsine reaction produces a compositional dependence on the gas phase stoichiometry (V/III ratio). Both of these effects are more severe for higher TMAA fluxes. High quality AlGaAs with excellent thickness and compositional uniformity was produced by spatially separating the TMAA and TEG in the gas phase which minimizes the parasitic reactions.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3458-3460 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The selective deposition of compound semiconductors on single crystal silicon tip arrays produces optical quality, direct band gap materials on the silicon nanostructures. We demonstrate using the organometallic vapor phase epitaxy of GaInP that the direct band gap semiconductor nucleates selectively on the silicon tips. The structural properties of the tips (whose radius of curvature is approximately 10–20 nm) are unaltered by this chemical vapor deposition process. Furthermore, intense band edge emission from the GaInP is observed with an external electron beam or laser stimulation indicating a good crystal quality for the three dimensional epitaxial structures. © 1997 American Institute of Physics.
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