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  • 1
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Fg; 64.60.My; 61.66.Dk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Fabrication of metastable binary solid state film mixtures with continuously variable composition by asymmetric cross-beam PLD is demonstrated. In this technique, the materials are mixed directly in the intersection region of colliding plasmas of individual target materials. This technique can be advantageous for synthesis of solid state quasi-solutions of partially miscible materials, where one can expect interesting mechanic properties and magnetic transformations.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1434-6036
    Keywords: PACS. 72.20.My Galvanomagnetic and other magnetotransport effects - 73.20.Dx Electron states in low-dimensional structures (superlattices, quantum well structures and multilayers) - 73.40.Hm Quantum Hall effect (integer and fractional)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: On bulk layered single crystals (Bi0.25Sb0.75)2Te3 with a hole concentration cm-3 and a mobility cm2/Vs magnetoresistance and Hall effect investigations were performed in the temperature range T = 1.4 K ... 20 K in magnetic fields up to 18 T. For the magnetic field perpendicular to the layered structure giant Shubnikov-de Haas oscillations are measured; the positions of the maxima are triplets in the reciprocally scaled magnetic field. From the damping of the amplitudes with increasing temperature the cyclotron mass m c = 0.12m 0 is evaluated. Correlated with the SdH oscillations doublets of Hall effect plateaus (or kinks in low fields) are found. The weak well known Shubnikov-de Haas oscillations from the generally accepted multivallied highest valence band can be detected as a modulation on the giant oscillation. The high anisotropy of the SdH oscillations and their triplet structure in connection with the layered crystal structure lead us to suggest that the effects are caused by hole carrier pairing (mediated by the bipolaron mechanism) in quasi 2D sheets parallel to the crystal layer stacks. The measured Hall plateau resistances coincide with the quantum Hall effect values considering the number of layer stacks and the valley degeneracy of the 3D hole carrier reservoir. The ratio of spin splitting to Landau (cyclotron) splitting is observed to be .
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  • 3
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5951-5956 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin valve systems are widely considered in magnetic rotation angle sensors. We present a simple magnetostatic model to simulate the electrical and magnetic signal of typical spin valve systems as a function of external magnetic field and rotation angle. To match simulation and experiment only a few parameters are needed, which can be determined by a single measurement. Two types of systems are treated and discussed: a simple spin valve and a spin valve with an "artificial antiferromagnet," often used to enhance the exchange bias. The model shows a very good correspondence of the predictions to the experimental results of the systems investigated. In order to quantitatively compare experiment and model, we introduce a useful concept to quantify the quality of the angle rotation curves: the total harmonic distortion. © 2002 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7113-7115 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnitude of the giant magnetoresistance (GMR) observed in multilayers is known to change irreversibly at elevated temperatures. To improve the thermal stability of devices, a fundamental understanding of the GMR and its correlation to the temperature-induced structural and morphological changes in a given system is mandatory. We therefore investigated the structural and magnetic properties of sputtered Co/Cu multilayers in the pre- and postannealed states (temperature regime for annealing up to 750 °C) by in situ x-ray diffraction, transport measurements, ferromagnetic resonance (FMR), and magneto-optical Kerr effect (MOKE). We were able to identify a sequence of distinct structural changes each of which sets in above a characteristic critical temperature. These critical temperatures depend strongly on the thickness of the individual layers. The structural alterations observed range from interfacial sharpening through texture reorientations up to the formation of a granular state, and are associated with distinct in/decreases of the GMR signal. Using FMR and MOKE we determined in-plane magnetic anisotropies and interlayer coupling for as-grown and annealed samples. © 2001 American Institute of Physics.
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Cu multilayers were prepared by dc magnetron sputtering, varying the individual layer thicknesses tCu≅tCo in the range of t=0.6–50 nm. Additionally, the ratio tCo/tCu was varied as tCo/tCu=0.4–4. Giant magnetoresistance (GMR) and saturation ferromagnetic (FM) resistivity for the first three antiferromagnetic (AFM) coupling maxima were measured as a function of temperature in the range of T=4.2–300 K, with the GMR values ranging up to 115%. For equidistant Co and Cu layers the saturation resistivity at T=4.2 K matches the size effect dependence in single thin films. Even when changing the single layer thickness or the Co/Cu thickness ratio by an order of magnitude a uniform normalized temperature dependence ρ(T,t)/ρ(T0,t) is found and no shunting effects are observed for tCo,tCu〈10 nm. The results favor the following GMR model: The resistivity in the FM (aligned) state is dominated by (hybridized) majority spin electrons, the states of which at similar s like regions of the Fermi surfaces of face-centered-cubic majority Co and Cu allow them to transmit the Co/Cu interfaces with a large mean free path λ. The temperature dependence of λ is governed by the transmittance and it is therefore uniform. Diffuse scattering at crystalline defects at the interfaces reduces λ in accordance with the size effect in single layers. The transition to the AFM state reduces the large λ to the dimensions of Cu–Co↑, ↓–Cu trilayers, that can be understood in terms of a temperature independent size effect, too. © 2001 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Acta Polymerica 38 (1987), S. 503-505 
    ISSN: 0323-7648
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8516-8520 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thin-film system Ni0.37Cr0.63/Cu0.57Ni0.42Mn0.01/Ni0.37Cr0. 63 with a typical thickness of 1 μm is used for low-ohmic precision resistors. The necessary adjustment of the temperature coefficient of resistance (TCR) by annealing has been studied by investigating the irreversible changes of the resistance during various annealing steps of NiCr/CuNi(Mn)/NiCr multilayers in comparison with single layers of CuNi(Mn) and NiCr. Auger depth profiles showed that the interdiffusion of CuNi(Mn) and NiCr results in an impoverishment of Ni in CuNi(Mn), explaining the TCR shift by comparison with data of Cu1−xNix bulk material. The decrease of the resistivity and the reduction of the width of the copper-nickel conductive layer by formation of a Ni0.6Cr0.2Cu0.2 interdiffusion zone phase (in accordance with the Cu-Ni-Cr phase diagram) cause a significant curvature of the resistance-temperature curve. As main result, it is shown that the NiCr base and cover layers and their interdiffusion with CuNi(Mn) play the decisive role in adjusting the TCR. It was checked that oxidation and topography effects have no remarkable influences. © 1996 American Institute of Physics.
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