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  • 1
    Electronic Resource
    Electronic Resource
    Atomic resonance-line lasers for atomic spectrometry (1980)
    s.l. : American Chemical Society
    Analytical chemistry 52 (1980), S. 1354-1356 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac50058a047
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  • 2
    Electronic Resource
    Electronic Resource
    Low-temperature laser deposition of tungsten by silane- and disilane-assisted reactions (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1072-1074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reaction, based on tungsten hexafluoride chemically reduced by silicon hydride vapors, has been developed for low-temperature laser deposition of high-purity tungsten. Compared to previous tungsten deposition methods, the new (pyrolytic) process requires very little thermal energy for initiation and propagation of the scanned reaction. WF6 and SiH4 (or Si2H6) mixtures have been optimized to yield tungsten interconnect lines with abrupt square cross section and conductivities of 12–25 μΩ cm. Impurity levels are below the detection limits of Auger spectroscopy. Lines 3–20 μm in width and 0.1–4 μm in thickness are written at scan speeds of ∼100 μm/s. Argon-ion laser powers (488 nm) are typically 30–60 mW, corresponding to reaction temperatures sufficiently low for direct writing on polyimide dielectrics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102569
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  • 3
    Electronic Resource
    Electronic Resource
    Selective area laser photodeposition of transparent conductive SnO2 films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1631-1633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of SnO2 films has been demonstrated using an ArF (193 nm) excimer laser to drive the photochemical reactions of mixed SnCl4 and N2 O vapors. Without any annealing, films 100 nm thick grown on room-temperature substrates have resistivities as low as 0.04 Ω cm. The optical band gap of 3.20 eV and transmission cutoff wavelength of 330 nm compare favorably with the best films obtained using alternate higher temperature techniques. Subsequent annealing does not increase the film's conductivity. Selective area growth of 10-μm-wide lines has been performed using proximity printing. The maximum temperature excursion during the laser pulse is estimated to be 300–400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101395
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical, crystallographic, and optical properties of ArF laser modified diamond surfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2295-2297 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulses of 193 nm radiation from an ArF laser with energies exceeding 0.5 J/cm2 have been shown to modify 40–60 nm thick layers of {100} and {110} oriented diamond surfaces. These layers exhibit highly anisotropic electrical and optical properties which have principal in-plane axes along the 〈110〉 directions. The minimum resistance is (4–10)×10−4 Ω cm, and minimum in the optical transmittance and maximum in the reflectance occur when the electric field vector of the incident polarized light is aligned along the low resistance direction. Transmission electron microscopy indicates that the modified layer primarily consists of unidentified graphite-like carbon phases embedded in diamond. The first-order electron diffraction spots correspond to lattice spacings of 0.123, 0.305, and 0.334 nm. The modified layer is stable at 1800 °C, forms ohmic contacts to type IIb diamond, and supports epitaxial diamond growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102042
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  • 5
    Electronic Resource
    Electronic Resource
    Laser bilayer etching of GaAs surfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 91-93 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An excimer-laser-stimulated etching technique is described for controlled pulse-by-pulse stripping of molecular bilayers from GaAs surfaces. The process is carried out in a molecular beam epitaxy (MBE) system equipped with an auxiliary low-pressure Cl2 chamber. 193 nm ArF laser light is used to pattern surfaces via projection optical imaging with high processing speed and without exposure to air between etching and MBE steps. A laser stroboscopic method has permitted temporal reaction mapping of the etching mechanisms involved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102097
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of excimer laser irradiation on the transmission, index of refraction, and density of ultraviolet grade fused silica (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1276-1278 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation-induced changes in high-purity fused silica during prolonged irradiation with a pulsed laser at 193 nm have been studied. Radiolytically induced UV absorption bands, an increase in index of refraction, and stress birefringence are observed. The formation mechanisms are analyzed in terms of radiolytic atomic rearrangement of a-SiO2 initiated by two-photon absorption. The quantum efficiency for the formation of E' point defects per pair of absorbed 193 nm photons has been determined to be ∼7.5×10−4; matrix compaction, as high as a few parts in 10−5, is identified as the source of the birefringence and index change. It has been further observed that E' centers can be photobleached.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102471
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  • 7
    Electronic Resource
    Electronic Resource
    High-accuracy post-fabrication trimming of surface acoustic wave devices by laser photochemical processing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 651-653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser direct writing reactions for molybdenum etching and Cr/Cr2O3 cermet conductivity transformation have been developed for concurrent phase and amplitude trimming of surface acoustic wave devices on LiNbO3. The molybdenum etching reaction utilizes photolytic decomposition of Cl2 with 488 nm light as a means to achieve low process temperature and avoid substrate damage. The cermet reaction utilizes a solid-state transformation in an O2 environment to render the film highly nonattenuating to surface acoustic waves with no underlying substrate damage. These techniques have been applied to trimming of reflective array compressors and have provided order-of-magnitude improvement in phase and amplitude accuracy over devices compensated by lithographic processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99841
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  • 8
    Electronic Resource
    Electronic Resource
    Excimer laser in situ treatment of GaAs surfaces: Electrical properties of tungsten/GaAs diodes (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1274-1276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of low-power irradiation of an n-type GaAs surface by a 193-nm excimer laser during tungsten metallization have been examined. Schottky diode characteristics of surfaces held under ultrahigh vacuum (10−9 Torr) conditions and in oxygen and chlorine ambients of 10−6 Torr show significant shifts in effective barrier height due to irradiation and depending on the ambient. The results of the electrical measurements are interpreted in terms of the possible laser surface chemistry. The applications for in situ surface cleaning for device processing within a vacuum GaAs growth chamber and applications for laser photochemical etching and oxidation of GaAs are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98703
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  • 9
    Electronic Resource
    Electronic Resource
    Reversible laser chemically induced phase transformations in thin-film Ba2YCu3Ox superconductors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 404-406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase transformations of a thin film of Ba2YCu3Ox were induced with a focused laser beam in chemical ambients. The transformations, involving superconductive and nonsuperconductive phases, are achieved rapidly and with a high degree of spatial control. They are fully reversible, and the appropriate processing parameters have been studied. These effects are interpreted within present models, which relate the superconducting properties of Ba2YCu3Ox to its oxygen content and crystalline structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99452
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  • 10
    Electronic Resource
    Electronic Resource
    Nanometer-scale columns in GaAs fabricated by angled chlorine ion-beam-assisted etching (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1726-1728 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Angled chlorine ion-beam-assisted etching has been used in combination with masked ion beam lithography to produce columns in GaAs with widths of less than 10 nm and height-to-width ratios greater than 25. This technique allows the highly controllable fabrication of structures with dimensions smaller than initially defined by the lithography. It can be applied to the fabrication of ultrasmall GaAs/AlGaAs quantum well structures having quantized energy states in two or three dimensions while at the same time being compatible with full-wafer processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98557
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