ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Usin the transfer matrix method we have studied the optical properties related to the photonic band gap (PBG) concept of the III-nitride family particularly InN and AlN. We have shown that these materials present, for a particular lattice constant and for the same structure, PBGs in all near infrared, optical and ultaviolet regions. In order to give optimal conditions for experiments, the number and the width of these PBGs are studied in more detail. The case of the absorption which occurs for the higher lattice parameter is discussed. This novel class of material opens up many potential applications. For example, PBG crystals can be used to inhibit spontaneous emission in photonic devices, leading to more efficient light emitters such as single-mode-light emitting diodes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008984814191
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