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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6058-6060 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogenation on GaAlAs layer grown by molecular beam epitaxy stored over a long period of time was investigated using photoluminescence (PL) measurement. Upon hydrogenation, the defects in the GaAlAs are passivated and the PL intensity increased many times. Hydrogenation changes the energy of the defect produced on storage of GaAlAs and new features appear in excitonic emissions. On annealing the hydrogenated GaAlAs at temperatures (approximately-greater-than)500 °C, the defects are depassivated and the PL intensity degraded. Hydrogenation improves the PL intensity of emission from a stack of GaAs/GaAlAs quantum wells (QW) of different well widths by a factor which varies with the depth of the QW from the surface. © 1995 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3246-3252 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clearly show passivation of defects on the surface as well as in the bulk region. The passivation of various recombination centers in the bulk is attributed to the formation of hydrogen-impurity complexes by diffusion of hydrogen ions from the plasma. a-Si:H acts as a protective cap layer and prevents surface degradation which is usually encountered by bare exposure to hydrogen plasma. An enhancement in luminescence intensity up to 20 times is seen due to the passivation of nonradiative recombination centers. The passivation efficiency is found to improve with an increase in a-Si:H deposition temperature. The relative passivation efficiency of donors and acceptors by hydrogen in undoped and Te-compensated p-GaSb has been evaluated by CL and by the temperature dependence of photoluminescence intensities. Most notably, effective passivation of minority dopants in tellurium compensated p-GaSb is evidenced for the first time. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1001-1003 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon (a-Si:H) has been deposited on n- and p-GaSb by the plasma glow discharge technique. The electrical characteristics of metal/a-Si:H/GaSb structures are presented. The current transport in these structures is dictated by the barriers at the metal/a-Si:H and a-Si:H/GaSb interfaces and the series resistance of the bulk a-Si:H interfacial layer. Space charge limited current in the interfacial layer gives rise to a voltage dependent resistance and increases the forward "turn-on'' voltage. Furthermore, these structures exhibit extremely low reverse leakage currents and high reverse breakdown voltages. Significantly, rectifying junctions of a-Si:H/p-GaSb have been achieved with barrier heights of ∼0.4 eV. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1458-1460 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fine structure has been observed in the 1.4 eV luminescence band of thin (≈100 A(ring)) amorphous silicon (a-Si:H) layers deposited on silicon substrates. The energy separation between the peaks is ≈20 meV. A similar luminescence band observed in layers grown on glass substrates under the same conditions is several orders of magnitude lower in intensity and is without perceptible fine structure. There is no change in the nature of the fine structure and the peak energies in films deposited at different substrate temperatures (150–300 °C). The dependence of the luminescence band on illumination intensity and on temperature has also been measured. This indicates probable excitonic nature of the luminescence. Possible causes for the observed phenomena are discussed. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Polymer bulletin 1 (1979), S. 671-678 
    ISSN: 1436-2449
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary The use of a Ce (IV)-thiomalic acid (Ce4+-TMA) redox system as an initiator in the polymerization of acrylamide (M) in an aqueous medium has been investigated. The Ce4+ forms a 1∶1 complex with TMA, decomposing through free radical mechanism in an acid medium. From 5 to 15% conversion the rate equation is $$R_p = - \frac{{d[M]}}{{dt}} = k[M]^{3/2} [Ce^{4 + } ]^x [TMA]$$ where Rp is the rate of polymerization and x is 0.5 or 1.0 depending upon the concentration of monomer. The overall energy of activation has been calculated to be 9.12 k cal. deg−1 mol−1(38.12 kJ/mol) in the investigated range of temperature (25°–40°C) the degree of polymerization (P) of the polymer is directly proportional to [M]. The number of average molecular weight of the polymer remains unaffected at lower concentration of Ce4+ and is found to decrease at higher concentrations. In this investigation the kinetics and mechanism of the Ce(IV)-thiomalic acid (TMA) redox system to initiate the polymerization of acrylamide has been studied. Acrylamide (E. Merck) was purified by usual methods. Thiomalic acid and eerie ammonium sulfate were used without purification. All solutions were p repared in twice distilled water. The polymerization procedure adopted was similar to the one used by MISRA et al. [3, 4]. The polymerization was followed by quantitative estimation of the double bonds in acrylamide as described [8]. A small variable induction period was observed perhaps due tothe residual oxygen in the thiol solution. Curves were plotted after eliminating the induction period. The average molecular weights of the p olymers were determined by viscosity measurements at 30°C in an aqueous medium using the relationship of DAINTON et al. [2]. $$[\eta ] 30^\circ = 6.8 x 10^{ - 4} \bar Mn^{0.66} $$ Where [η]=intrinsic viscosity of the polymer solution and ¯Mn=molecular weight of the sample.
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Astrophysics and space science 102 (1984), S. 71-79 
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The solution of basic flow equations of perfect magnetofluid in the fixed background of Kerr space-time has been obtained. We assume that magnetofluid (test) flow around a Kerr black hole is stationary and axisymmetric. A particular solution exhibits the property that flow lines lie on circles of constant radius. In addition, it is found that magnetofluid is endowed with ‘frozen-in‘ magnetic field-i.e., that it moves with the material.
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Astrophysics and space science 97 (1983), S. 427-433 
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Some basic equations pertaining to the accretion of perfect magnetofluid on compact objects are derived without assuming that the flow is purely circular or purely radial. In addition, we assume that the magnetofluid exerts negligible self-gravitation and that its flow is stationary and axisymmetric. We restrict ourselves to the case of ‘stiff’ or ‘incompressible’ fluid with an equation of state: pressure = energy-density.
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Astrophysics and space science 126 (1986), S. 99-104 
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The entropy accretion rate of perfect thermodynamic magnetofluid (test) flow is obtianed in the framework of Kerr space-time. Accretion by a moving black hole is also investigated, and it is shown that the moving black hole is able to focus the magnetofluid flow lines.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Astrophysics and space science 188 (1992), S. 331-335 
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Dynamical equations of magnetofluid are derived for Robertson-Walker line element. We recover the results of perfect fluid in a special case when the magnetic field is made to vanish. Certain conditions are derived to show that the magnetofluid universe is open or closed.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Astrophysics and space science 150 (1988), S. 205-212 
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The solutions of the Einstein and Einstein-Maxwell equations for magnetofluid with cosmological constant are obtained for plane-symmetric space-time. We recover the results of Hojman and Santamarina in a special case when the magnetic field is made to vanish. It has also been shown that under a suitable transformation the cases Λ=0 and Λ≠0 are mathematically equivalent.
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