Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 2300-2304
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Highly carbon-doped Ga0.47In0.53As layers grown by chemical beam epitaxy have been exposed to a deuterium plasma. Deuterium diffusion profiles reflect very strong C–D interactions. Concerning electronic transport properties, from p-type when as-grown, these GaInAs samples turn to n-type after plasma exposure. Annealings of deuterated layers have also been performed. They show that temperatures as high as 450 °C must be reached before p-type conductivity is fully restored in the material. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363060
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