Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
65 (1989), S. 4082-4084
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This study has been undertaken in an attempt to investigate the possible applications of transition-metal-doped amorphous silicon-dioxide in floating-gate avalanche-metal/silicon-dioxide/silicon-type nonvolatile memories, with the objective of developing an electrically erasable programmable read-only memory structure with low WRITE and ERASE voltages, (e.g., (approximately-equal-to)5 V) which does not depend for its operation on the very thin tunneling oxides (i.e., ≤80 A(ring)) currently used and which are a major source of device instability and degradation. Results are presented for 200-A(ring)-thick vanadium-doped silicon-dioxide films which show reproducible current-voltage characteristics at much reduced voltages compared with conventional thin thermal oxides.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343340
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