ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A transmission electron microscopy study of structural defects induced by the introduction of Mg during the growth of metalorganic vapor phase epitaxy GaN is presented. These defects are assumed to be pyramidal inversion domains with an hexagonal base and {112¯3} inclined facets. The tip of the pyramids is always pointing toward the [0001¯] direction, i.e., in a Ga-terminated film, toward the substrate and in a N-terminated film, toward the surface. A chemical quantitative analysis shows that these pyramidal defects are Mg rich. They are present in all the studied films, independent of the doping level. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1306421
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