ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
3C-SiC/Si heteroepitaxy is hampered by large mismatches in lattice parameters (19.7%)and thermal expansion coefficient (8%) leading to 3C-SiC films containing high defects density. Toreduce the presence of defects, a multi-step growth process in a CVD reactor is used. The aim of thework is to study the effect of carbonization on differently oriented Si surfaces, experiencing a200°C-wide temperature range in a CVD reactor, to improve the crystalline quality. TEM analysisare carried out to evaluate thickness, crystal orientations and defects of carbonized layers withrespect to the time-dependence of the process and to the different orientations of the Si substrate. Itwill be shown that process-related defects are strictly correlated to the substrate orientation eitherfor size, density, occupied area, shape or thickness. Uniform, flat and crystalline thin SiC films areobtained with a low defect density
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.171.pdf
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