Publication Date:
2015-05-08
Description:
Transition metal dichalcogenides such as the semiconductor MoS 2 are a class of two-dimensional crystals. The surface morphology and quality of MoS 2 grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moiré patterns from several triangular MoS 2 islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS 2 adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS 2 grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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