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  • 1
    Electronic Resource
    Electronic Resource
    Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7841-7845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal TiN(111) layers, 45 nm thick, were grown on MgO(111) by ultrahigh vacuum reactive magnetron sputter deposition in pure N2 discharges at Ts=700 °C. Epitaxial Al(111) overlayers, 160 nm thick, were then deposited at Ts=100 °C in Ar without breaking vacuum. Interfacial reactions and changes in bilayer microstructure due to annealing at 620 and 650 °C were investigated using x-ray diffraction and transmission electron microscopy (TEM). The interfacial regions of samples annealed at 620 °C consist of continuous (similar, equals)7-nm-thick epitaxial wurtzite-structure AlN(0001) layers containing a high density of stacking faults, with (similar, equals)22 nm thick tetragonal Al3Ti(112) overlayers. Surprisingly, samples annealed at the higher temperature are more stable against Al3Ti formation. TEM analyses of bilayers annealed at 650 °C (10 °C below the Al melting point!) reveal only the self-limited growth of an (similar, equals)3-nm-thick interfacial layer of perfect smooth epitaxial wurtzite-structure AlN(0001) which serves as an extremely effective deterrent for preventing further interlayer reactions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372162
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  • 2
    Electronic Resource
    Electronic Resource
    Dense fully 111-textured TiN diffusion barriers: Enhanced lifetime through microstructure control during layer growth (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3633-3641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature deposition of TiN by reactive evaporation or sputter deposition onto amorphous substrates leads to highly underdense layers which develop mixed 111/002 orientations through competitive growth. In contrast, we demonstrate here the growth of low-temperature (450 °C) fully dense polycrystalline TiN layers with complete 111 texture. This was achieved by reactive magnetron sputter deposition using a combination of: (1) highly oriented 25-nm-thick 0002 Ti underlayers to provide 111 TiN orientation through texture inheritance (local epitaxy) and (2) high flux (JN2+/JTi=14), low-energy (EN2+(similar, equals)20 eV), N2+ ion irradiation in a magnetically unbalanced mode to provide enhanced adatom diffusion leading to densification during TiN deposition. The Ti underlayers were also grown in a magnetically unbalanced mode, in this case with an incident Ar+/Ti flux ratio of 2 and EAr+(similar, equals)11 eV. All TiN films were slightly overstoichiometric with a N/Ti ratio of 1.02±0.03. In order to assess the diffusion-barrier properties of dense 111-textured TiN, Al overlayers were deposited without breaking vacuum at 100 °C. Al/TiN bilayers were then annealed at a constant ramp rate of 3 °C s−1 to 650 °C s−1 and the interfacial reaction between Al and TiN was monitored by in situ synchrotron x-ray diffraction measurements. As a reference point, we find that interfacial Al3Ti formation is observed at 450 °C in Al/TiN bilayers in which the TiN layer is deposited directly on SiO2 in a conventional magnetically balanced mode and, hence, is underdense with a mixed 111/002 orientation. However, the onset temperature for interfacial reaction was increased to 610 °C in bilayers with fully dense TiN exhibiting complete 111 preferred orientation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371271
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  • 3
    Electronic Resource
    Electronic Resource
    Enhancement of titanium nitride barrier metal properties by nitrogen radical assisted metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2580-2582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using metalorganic chemical vapor deposition assisted by a nitrogen radical irradiation generated by rf plasma, we have enhanced the quality and the step coverage of titanium nitride barrier metals for the contact holes with a high aspect ratio and a submicron radius. Electrical resistivity measurements show that the film resistivity improves by a factor of five as the proper nitrogen irradiation has been applied. The step coverage in a contact hole with 0.4 μm diam and 3:1 aspect ratio has been improved from 50% to 80% by applying nitrogen plasma, clearly demonstrating the effectiveness of this technique in the conformal deposition of barrier metals for the ultra-large scale integration. The incident nitrogen radical is believed to play several roles, such as the enhancement of surface migration rate of molecules and the reduction of the amount of hydrocarbon incorporating into the film during the deposition. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116190
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  • 4
    Electronic Resource
    Electronic Resource
    A study of the tool life of TiC and TiC plus Al2O3 chemical vapour deposited tungsten carbide tools (1985)
    Springer
    Journal of materials science 20 (1985), S. 1285-1290 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Tool life characteristics were investigated for tungsten carbide cutting tools coated with TiC and with TiC plus Al2O3. A low carbon steel workpiece was turned on a lathe at a feed rate of 0.206 to 0.410 mm rev−1 and a depth of cut of 0.1 to 0.5 mm for cutting velocities between 100 and 250 m min−1. Data were analysed using both Taylor's tool life equation and Wu's tool life method. Results were similar for both methods but Wu's method seemed to give more consistent results. Compared to an uncoated tungsten carbide tool, the tool life of both the coated tools were from 5 to 7 times longer and the improvement was greater at higher cutting speeds. The TiC plus Al2O3 coated tool was slightly superior to the TiC coated tool. The wear mechanism and a possible explanation of increased tool life for the coated tools are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01026324
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  • 5
    Electronic Resource
    Electronic Resource
    A comparative evaluation method of machinability for mica-based glass-ceramics (1995)
    Springer
    Journal of materials science 30 (1995), S. 1801-1806 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The machinability of mica glass-ceramics is evaluated using a tool dynamometer. Several samples with different chemical compositions and microstructures were tested in turning operations using TiCN cermet tools. The cutting rate dependence of specific cutting energy has been studied to find a simple method for the evaluation of machinability. The mechanical strength, the surface roughness of the machined surface and the fracture toughness were measured to support the machining behaviour. For the determination of machinability, the specific cutting energy at low cutting rate conditions, neglecting an elastic impact effect, and the slope of the log-log plot of the specific cutting energy versus cutting rate were considered as the reasonable parameters. These results are correlated with the microstructure and the hardness of the workpiece. In particular, the microhardness of the sample is shown to control the cutting characteristic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00351613
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of the deposition temperature on the resistivity of copper films produced by low-pressure metal-organic chemical vapour deposition on a TiN barrier layer (1995)
    Springer
    Journal of materials science 30 (1995), S. 2029-2034 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Copper was deposited on to TiN by low-pressure metal-organic chemical vapour deposition, using hexafluoroacetylacetonate-Cu+1-trimethylvinylsilane (hfacCu(I)TMVS) and argon carrier gas. The resistivity of the deposited copper films was investigated by observing the effects of the deposition temperature on the composition, microstructure and surface morphology of the copper films. The resistivity of the copper films decreases as the deposition temperature decreases. The copper films deposited at high temperatures, tend to contain the pores and or/ channels as well as carbon and oxygen, which results in the increase of the resistivity of the deposited films. The pores and/or channels come from the island-like growth of the copper films, while carbon and oxygen are due to the concurrent thermal decomposition of hfac during the disproportionation reaction between hfacCu(I) molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00353029
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  • 7
    Electronic Resource
    Electronic Resource
    Glass forming ranges of cobalt-base thin film alloys (1988)
    Springer
    Journal of materials science 23 (1988), S. 4165-4170 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The glass forming ranges of cobalt-base binary and ternary thin film alloys containing zirconium, titanium, niobium, molybdenum, vanadium and silicon have been studied in the cobalt-rich region. The minimum solute concentration for glass formation decreased with increasing difference in atomic radii or Pauling's electronegativity, as well as the cooling rate. Cobalt-base binary alloys readily showing glass formation are shown on the glass formation diagram. The values of atomic size effect in alloys sputtered at room temperature were about 0.065, and decreased with increase of cooling rate. The value was decreased in alloys having a large heat of formation. In ternary cobalt alloys containing zirconium, niobium, molybdenum and vanadium, the glass forming range could not be interpreted as the concept of atomic size effect alone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01106852
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of deposition rate on the encroachment in tungsten films reduced by H2 (1991)
    Springer
    Journal of materials science 26 (1991), S. 5318-5322 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The deposition rate of tungsten selectively prepared by hydrogen reduction of WF6 was measured, and the encroachment produced by inherent silicon reduction even in the presence of H2 gas was examined by cross-sectional TEM and SEM. In the WF6-H2 system, the degree of encroachment is not explained by the Si reduction reaction alone, but is rather related to the Si reduction time decreasing with increasing deposition rate of H2-reduced tungsten film, because a blocking layer is formed above the Si-reduced tungsten. This results in a lesser degree of encroachment. Consequently a high deposition rate of H2-reduced tungsten can decrease the degree of encroachment. By calculation, a thickness of 6.8–13.3 nm is necessary for H2-reduced tungsten to prevent WF6 gas from reacting with Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01143227
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of deposition temperature on the microstructure of MOCVD Y1Ba2Cu3O7−x thin films (1993)
    Springer
    Journal of materials science 28 (1993), S. 2915-2922 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effects of deposition temperature on the microstucture and composition of Y1Ba2Cu3O7−x films deposited on MgO and SrTiO3 substrates by the metal-organic chemical vapour deposition (MOCVD) method were investigated. As the deposition temperature decreased from 900 to 700 °C, the Cu content in the deposited film increased. SEM micrographs of the films showed that the growth direction of the film was changed from c axis to a axis perpendicular to the substrate surface, and then to random orientation, as the deposition temperature decreased. The superconducting transition temperature and the transition width of films deposited on SrTiO3 substrates at temperatures higher than 810 °C were over 90 K and within 1 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00354694
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  • 10
    Electronic Resource
    Electronic Resource
    Corrosion behaviour of TiN films obtained by plasma-assisted chemical vapour deposition (1994)
    Springer
    Journal of materials science 29 (1994), S. 1818-1824 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Titanium nitride (TiN) coatings with a dense structure were prepared on high-speed steel by plasma-assisted chemical vapour deposition (PACVD). The electrochemical polarization measurement of TiN coating was compared with that of the uncoated substrate. It was found that the TiN coating had a higher corrosion potential, and a lower corrosion rate (current density), about three orders of magnitude less than for the steel substrate. The major corrosion mechanism of TiN was pitting corrosion through surface defects and/or open pores. The number and size of pits decreased with the chlorine content of the film. The TiN coating deposited by PACVD, regardless of the amount of residual chlorine, proved to be a good anti-corrosion coating on a steel substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00351301
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