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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 115 (1993), S. 6247-6253 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 1183-1185 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Low frequency Raman spectra (20–400 cm−1) are presented of formamide dissolved in dimethylsulfoxide (DMSO). The concentration of formamide ranges from 2%–75% (v/v). The two formamide bands at 110 and 190 cm−1 in the neat liquid exhibit only smaller frequency shifts upon dilution. The intensities of both bands are proportional to the concentration of formamide. The conclusion is, that the linear chain structure, found in neat liquid formamide, is conserved in the DMSO solution. Raman spectra of the NH-stretching region (2950–3500 cm−1) confirm this hypothesis.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 85 (1981), S. 2531-2535 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 926-931 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 694-699 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an overview of a cross-sectional scanning microphotoluminescence technique that is used to examine various buried-layer semiconductor structures for which traditional surface-normal techniques cannot yield sufficient information or must be coupled with time-consuming and painstaking processes such as wet etching. This technique has a wide range of applications; two—defect-driven interdiffusion in quantum wells and the modification of spontaneous emission from quantum wells in vertical-cavity surface-emitting lasers (VCSELs)—are discussed here. The data obtained using this method can be used to distinguish emission spectra from quantum wells as little as one micrometer apart in depth and a few nanometers different in wavelength. The comparison of normal incidence with cross-sectional data from VCSELs can be used to more effectively optimize the match between cavity resonance and quantum well emission in high-Q devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5982-5989 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several analytical tools are applied to characterize vertical-cavity surface-emitting laser structures grown on GaAs wafers. These epitaxial structures are amenable to x-ray, electron-beam, and optical metrologies. Cross-sectional scanning electron microscopy and transmission electron microscopy were used to measure layer thicknesses and uniformity. Photoluminescence wafer mapping was used to determine alloy composition uniformity across the wafer. Photoreflectance was also used to determine alloy composition. Cross-sectional microphotoluminescence was used to measure average alloy compositions in the top and bottom mirrors. Reflectance spectroscopy was used to characterize the cavity resonances and mirror layers. Double-crystal x-ray diffractometry (DCXRD) was used to characterize mirror layer dimensions, uniformity, and average alloy composition. Excellent agreement was found among these measurement techniques and between simulations and measurements. The results demonstrate the accuracy of the device simulation tools and the applicability of DCXRD in analyzing these structures.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7169-7175 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the development of high quality, broad-bandwidth, antireflection (AR) coatings using the low index provided by wet thermally oxidized Al0.98Ga0.02As. We address the design criteria, fabrication, and characterizations of AR coatings composed of surface and buried oxide layers on GaAs. We show, using native-oxide dispersion data, that surface oxide coatings can be designed to offer a nearly zero minimum of reflectance and a reflectance of 〈1% over bandwidths as large as 500 nm. Surface coatings having a reflectance minimum of 0.4% and a reflectance of 〈1% over 〉250 nm have been experimentally demonstrated at a design wavelength of 1 micrometer. Additionally, buried oxide coatings can be designed with an AlxGa1−xAs matching layer of any composition to exactly match the admittance of any substrate with effective index between 2.5 and 3.5. We have demonstrated buried oxide coatings, also designed for 1 micrometer, having a reflectance minimum of 0.4% and a reflectance of 〈1% over 21 nm. The calculated optical scattering loss from measured roughness data indicates that reflectance minima as low as 10−4 % are ultimately achievable with native-oxide antireflection coatings.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3512-3514 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the optical constants of oxidized crystalline and low-temperature-grown (LTG) Al0.98Ga0.02As films, as determined by variable angle spectroscopic ellipsometry. Data were acquired at three angles of incidence over 240–1700 nm and fitted to a Cauchy dispersion function. For oxidized crystalline material, we observe a variation in the real index of ±0.5% for layer thickness variations of ±6%. We show that upon oxidation, LTG material can expand by 〉25% while crystalline material contracts by 〈2%. Atomic force microscopy analysis indicates thickness-dependent variations in the oxide microstructure. Additionally, an optical scattering loss of 2.1×10−4%/pass is calculated based on surface roughness measurements for a thin layer of oxidized crystalline material. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3987-3989 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used multilayer mirror optimization methods to enhance the coupling of pump light into vertical-cavity surface-emitting lasers (VCSELs). With previously reported devices, pump light was coupled into VCSEL cavities through interference notches in the mirror reflectance spectrum. This approach is sensitive to temperature dependent reflectance spectrum shifts. We have created devices with a wide pump-band window of low reflectance. We report the simulation, growth, and optically pumped lasing of such optimized low-ripple VCSELs. Further, broadband pump windows open the possibility of spectrally-broad optical pumps and they eliminate need for costly tunable pump lasers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of chemical crystallography 1 (1971), S. 33-41 
    ISSN: 1572-8854
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract The infrared spectra oftrans-dichlorodiiodoethylene as a solid and in solution were recorded in the region 4000–25 cm−1. Raman spectra of the compound were obtained and semiquantitative polarization data were calculated. The mutual exclusion between the infrared and Raman frequencies are in agreement with the expectedC 2h (2/m) symmetry for this molecule. The fundamentals have been assigned and a normal coordinate analysis carried out. Thermodynamic functions and the root mean square amplitudes of vibration have been obtained.
    Type of Medium: Electronic Resource
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