Electronic Resource
Amsterdam
:
Elsevier
International Journal of Radiation Applications & Instrumentation. Part C,
35 (1990), S. 500-506
ISSN:
1359-0197
Keywords:
Power MOS transistors
;
annealing
;
electron irradiation
;
lifetime control
;
radiation-induced defects
Source:
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Topics:
Chemistry and Pharmacology
,
Energy, Environment Protection, Nuclear Power Engineering
,
Physics
Type of Medium:
Electronic Resource
URL:
http://linkinghub.elsevier.com/retrieve/pii/1359-0197(90)90259-K
Permalink
|
Location |
Call Number |
Expected |
Availability |