ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2472-2474 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical estimates of the temperature distributions are obtained in structures where thin copper films mounted on special membrane wafer transmission electron microscopy (TEM) specimens are exposed to low energy (63–114 eV) ion bombardment in a magnetically enhanced (ME) plasma reactor. The substrate temperatures are experimentally measured as a function of rf power in the plasma reactor and of time. The temperature rise in the copper films is obtained based on a two-dimensional heat transfer finite element analysis with input of a heat flux at the surface due to ion bombardment. The results indicate that copper heating due to ion bombardment is minimal because of rapid heat transfer through the underlying structure and the observed microstructural changes in copper films during plasma processing must be attributed to other causes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have extended the mechanical equilibrium theory of J. W. Matthews and A. E. Blakeslee [J. Cryst. Growth 27, 118 (1974)] (MB) for determining the critical thickness in semiconducting heteroepitaxial films by including the effect of the Peierls barrier. The new formulation allows an evaluation of the dependence of critical thickness on the orientation of epithreading dislocation, and a comparison of theoretical predictions with measurements indicates that a knowledge of the epithreading dislocation orientation is necessary in predicting critical thicknesses in heteroepitaxial structures. In this formulation, the effect of the Peierls barrier is to bring the theoretical critical thicknesses closer to experimental values as compared to the predictions of the MB theory.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4816-4822 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a methodology for obtaining stresses near isolation trenches in silicon considering the entire trench forming process. A two-dimensional plane strain finite element stress analysis is performed for a trench with a thermal SiO2 sidewall and polysilicon "fill'' which includes the cumulative stresses from the superposition of (i) residual stresses from the thermal oxidation step, (ii) the intrinsic stress from the polysilicon deposition, and (iii) stresses due to the coefficient of thermal expansion mismatch between SiO2 and silicon during the temperature cycles involved in the process. The thermal oxidation step is simulated using a two-dimensional nonlinear viscoelastic program novel [in Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, J. D. Plummer, and S. T. Pantelides (Electrochemical Society, Pennington, NJ, 1991), p. 772], that produces the oxide shape and stress at the oxide-silicon interface which is converted into equivalent nodal forces on the finite element grid. We have also made a three-dimensional finite element analysis of the thermal mismatch stresses between a parallelopipedic oxide inclusion in silicon with anisotropic properties and have compared these results with the analytical results [J. Appl. Phys. 66, 2741 (1989); 67, 1092 (1990)] in which the oxide and silicon are assumed to have identical isotropic elastic properties.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    ISSN: 1619-6937
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary The family of f.c.c. crystal orientations defined by loading direction (110) and any channel die constraint direction between ( $$00\bar 1$$ ) and ( $$1\overline {12} $$ ) is kinematically unstable. We establish that the experimentally observed finite rotation of the lattice about the loading axis, for initial orientations in this range, is uniquely predicted by the constraints and critical slip-system inequalities without regard to particular hardening theory. We further establish that experimental information on the changing constraint stress would serve to distinguish among theories. Predictions of three specific hardening rules, including classical Taylor hardening and the “simple theory”, are illustrated for initial constraint directions ( $$1\overline 1 \overline {16} $$ ) and ( $$3\bar 3\bar 7$$ ). For the first of these orientations the predictions include constraint stress, lattice rotation, active and latent hardening, and overall crystal shearing to a logarithmic compressive strain of 1.0.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 0022-5096
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Solid State Electronics 36 (1993), S. 1653-1664 
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 783-785 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed and compared the resolved shear stresses of all 12 glide systems for the 60° dislocation for 〈110〉-aligned and 〈100〉-aligned isolation trenches. From among the 12 glide systems, we select for each trench alignment the one which exhibits the highest stress level. The results for the two alignments are then compared. We find that the largest resolved shear stress for a 〈110〉-oriented trench is about 30% more than that for a 〈100〉-oriented trench from both the isotropic and the anisotropic analyses. Other factors that may cause a reduction of dislocation density for the 〈100〉-trench alignment are also discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistance saturation as a function of current density, stripe length, stripe width, and temperature is investigated for a two-level structure with Ti/AlCu/Ti/TiN stripes and interlevel W stud vias. A simple model based on first principles is presented, which relates the maximum fractional resistance change to the current density and stripe length. Experimental results for stripe lengths of 30, 50, 70, and 100 μm are in good agreement with the model predictions. Estimated void sizes based on the resistance saturation data are consistent with the actual void sizes determined from scanning electron microscopy analysis. A weak temperature dependence is found for 0.33 μm-wide samples in the range 170–250°C, while a strong width dependence is observed between 0.33 and 1.50 μm- wide samples. The width dependence is qualitatively explained in terms of a relaxed bulk modulus that depends on the aspect ratio of the interconnect lines. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...