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  • 1
    Electronic Resource
    Electronic Resource
    Donor complex formation due to a high-dose Ge implant into Si (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4252-4254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate boron deactivation and/or donor complex formation due to a high-dose Ge and C implantation and the subsequent solid phase epitaxy, SiGe and SiGeC layers were fabricated and characterized. Cross-sectional transmission electron microscopy indicated that the SiGe layer with a peak Ge concentration of 5 at. % was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of the Ge as a result of strain relaxation. Photoluminescence (PL) results were found to be consistent with dopant deactivation due to Ge implantation and the subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at. %), the PL results support our previously proposed donor complex formation. These findings were confirmed by spreading resistance profiling. A model for donor complex formation is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355963
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  • 2
    Electronic Resource
    Electronic Resource
    Separation of plasma implantation of oxygen to form silicon on insulator (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1748-1750 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Separation by plasma implantation of oxygen (SPIMOX) is an economical method for silicon-on-insulator (SOI) wafer fabrication. This process employs the plasma immersion ion implantation (PIII) for the implantation of oxygen ions. The implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simpler implanter set-up is lower in cost and easier to maintain. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. The operational phase space on implantation condition, oxygen dose, and annealing requirement are identified. Secondary ion mass spectrometry analysis and cross-sectional transmission electron microscopy micrographs of the SPIMOX sample showed continuous buried oxide under single crystal overlayer with sharp silicon/oxide interfaces. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118645
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  • 3
    Electronic Resource
    Electronic Resource
    Synthesis of SiGe and SiGeC alloys formed by Ge and C implantation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1915-1917 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, near surface SiGe and SiGeC alloys with germanium peak composition up to 16 at.% were formed using high-dose ion implantation and subsequent solid phase epitaxial growth. Rutherford backscattering spectroscopy (RBS) channeling spectra and cross-sectional transmission electron microscopy (XTEM) studies showed that high quality Si0.92Ge0.08 and Si0.91Ge0.08C0.01 crystals were formed at the Si surface, while Si0.84Ge0.16 and Si0.82Ge0.16C0.02 layers had extended defects. X-ray diffraction experiments demonstrated that carbon could reduce the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RBS channeling spectra or XTEM observations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117620
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  • 4
    Electronic Resource
    Electronic Resource
    Pd/Si plasma immersion ion implantation for selective electroless copper plating on SiO2 (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2767-2769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective deposition of copper in SiO2 trenches has been carried out using Pd/Si plasma immersion ion implantation and electroless Cu plating. To form the seed layer for electroless Cu plating on SiO2, sputtered Pd and Si atoms were partially ionized by the Ar plasma and then deposited at bottoms of SiO2 trenches; Ar ion beam was then applied to assist the mixing of the deposited Pd/Si films with the SiO2 substrate by recoil implantation. We found a threshold Pd dose of 2×1014/cm2 is required to initiate the electroless plating of Cu. By careful control of the anisotropic etching of the oxide trenches and proper choice of the Pd dose, 1-μm wide Cu filled lines with flat surfaces suitable for planarized multilevel metallization were successfully fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106871
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  • 5
    Electronic Resource
    Electronic Resource
    Formation of buried oxide in silicon using separation by plasma implantation of oxygen (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2361-2363 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma immersion ion implantation (PIII) is used to fabricate buried oxide layers in silicon. This "separation by plasma implantation of oxygen'' (SPIMOX) technique can achieve a nominal oxygen atom dose of 2×1017 cm−2 in implantation time of about 3 min. SPIMOX is thus presented as a practical high-throughput process for manufacturing silicon-on-insulator. In the SPIMOX samples prepared, three distinct modes of buried oxide microstructure formation are identified and related to the as-implanted oxygen profiles. A first-order model based on oxygen transport and oxide precipitation explains the formation mechanisms of these three types of SPIMOX layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114345
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  • 6
    Electronic Resource
    Electronic Resource
    Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2682-2684 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to study the strain-compensation effect by C atoms in solid phase epitaxial (SPE) growth of SiGe alloy layers, C sequential implantation was performed in [100] oriented Si substrates with various doses after high dose (5×1016/cm2) Ge implantation. When the nominal peak concentration of implanted C was over 0.55 at. % in the present sample series, misfit dislocation generation in the epitaxial layer was considerably suppressed. A SiGe alloy layer with 0.9 at. % C peak concentration under a 12 at. % Ge peak shows the greatest improved crystallinity compared to layers with smaller C peak concentrations. The experimental results, combined with a simple model calculation, indicate that the optimum Ge/C ratio for strain compensation is between 11 and 22.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110419
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  • 7
    Electronic Resource
    Electronic Resource
    Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2767-2769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the implementation of ion-cut silicon-on-insulator (SOI) wafer fabrication technique with plasma immersion ion implantation (PIII). The hydrogen implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simple PIII reactor setup and its compatibility with cluster-tools offer other ion-cut process optimization opportunities. The feasibility of the PIII ion-cut process is demonstrated by successful fabrication of SOI structures. The hydrogen plasma can be optimized so that only one ion species is dominant. The feasibility of performing ion-cut using helium PIII is also demonstrated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120127
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  • 8
    Electronic Resource
    Electronic Resource
    Hydrogen induced silicon surface layer cleavage (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1804-1806 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Physical mechanisms of hydrogen induced silicon surface layer cleavage were investigated using a combination of microscopy and spectroscopy techniques. The evolution of the silicon cleavage phenomenon is recorded by a series of microscopic images. The underlying hydrogen profiles under (between 250 and 500 °C) annealing are characterized by secondary-ion-mass spectroscopy and hydrogen forward scattering experiments. An idea gas law model calculation suggests that internal pressure of molecular hydrogen filled microcavities is in the range of Giga-Pascal, high enough to break silicon crystal bond. A dose threshold, which prevents cleavage, is observed at 1.6×1017 cm−2 for 40 kV hydrogen implantation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119404
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  • 9
    Electronic Resource
    Electronic Resource
    Defect control during solid phase epitaxial growth of SiGe alloy layers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 929-931 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the processing procedures required for minimizing structural defects generated during the solid phase epitaxial (SPE) growth of SiGe alloy layers is described. It includes high dose Ge implantation into Si at liquid nitrogen temperature (LNT), sequential carbon implantation, and an 800 °C anneal. The LNT implantation step considerably reduces the density of end-of-range (EOR) defects relative to that found in SPE grown SiGe layers implanted at room temperature, while the sequential implantation of carbon ions before annealing effectively suppresses the formation of stacking faults that are found to form at a threshold peak concentration of about 6 at. % Ge in the absence of carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109847
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  • 10
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    Sample stage induced dose and energy nonuniformity in plasma immersion ion implantation of silicon (1998)
    American Institute of Physics
    Details
    Publication Date: 1998-07-13
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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