ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC single crystal with a diameter of 1.5’’ has been grown by the seed sublimationmethod. Regions of mixed polytypes are assessed by high resolution X-ray diffractometry with theasymmetrical diffraction geometry. Multiple reflections are observed from the rocking curvemeasurements of a longitudinal cut 4H-SiC slice. Those reflections are indexed to be 2131 and2131 of 4H-SiC, 2130 , 2131 , 2131 , 2132 and 2132 of 6H-SiC, 2131 , 2132 , 2134 , 2135 and2137 of 15R-SiC respectively based on the lattice constants of different polytypes in SiC crystal. Itis believed that the polytypes can be identified by high resolution X-ray diffractometry
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.451.pdf
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