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  • 1
    Publication Date: 2014-08-20
    Description: The catalytic cysteine of the typical 2-Cys Prx subfamily of peroxiredoxins is occasionally hyperoxidized to cysteine sulfinic acid during the peroxidase catalytic cycle. Sulfinic Prx (Prx–SO2H) is reduced back to the active form of the enzyme by sulfiredoxin. The abundance of Prx–SO2H was recently shown to oscillate with a period...
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
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  • 2
    Publication Date: 1999-05-15
    Description: Glutamic acid decarboxylase (GAD) is a pancreatic beta cell autoantigen in humans and nonobese diabetic (NOD) mice. beta Cell-specific suppression of GAD expression in two lines of antisense GAD transgenic NOD mice prevented autoimmune diabetes, whereas persistent GAD expression in the beta cells in the other four lines of antisense GAD transgenic NOD mice resulted in diabetes, similar to that seen in transgene-negative NOD mice. Complete suppression of beta cell GAD expression blocked the generation of diabetogenic T cells and protected islet grafts from autoimmune injury. Thus, beta cell-specific GAD expression is required for the development of autoimmune diabetes in NOD mice, and modulation of GAD might, therefore, have therapeutic value in type 1 diabetes.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Yoon, J W -- Yoon, C S -- Lim, H W -- Huang, Q Q -- Kang, Y -- Pyun, K H -- Hirasawa, K -- Sherwin, R S -- Jun, H S -- DK 45735/DK/NIDDK NIH HHS/ -- DK 53015-01/DK/NIDDK NIH HHS/ -- New York, N.Y. -- Science. 1999 May 14;284(5417):1183-7.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Laboratory of Viral and Immunopathogenesis of Diabetes, Julia McFarlane Diabetes Research Centre, Faculty of Medicine, University of Calgary, Calgary, Alberta T2N 4N1, Canada. yoon@ucalgary.edu〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10325232" target="_blank"〉PubMed〈/a〉
    Keywords: Adoptive Transfer ; Animals ; Autoantigens/genetics/*immunology/physiology ; Autoimmunity ; DNA, Antisense ; Diabetes Mellitus, Type 1/*enzymology/*immunology/pathology ; Female ; Gene Expression ; Glutamate Decarboxylase/genetics/*immunology/physiology ; Insulin/blood/metabolism ; Islets of Langerhans/*enzymology/immunology/metabolism/pathology ; Islets of Langerhans Transplantation ; Lymphocyte Activation ; Male ; Mice ; Mice, Inbred NOD ; Mice, SCID ; Mice, Transgenic ; T-Lymphocytes/immunology ; Transgenes
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 3
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 54 (1993), S. 1509-1513 
    ISSN: 0022-3697
    Keywords: Multinary compound CuGa"1"-"XAl"XSe"2 ; crystal-field ; optical absorption ; transition metal impurity
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    BBA - Protein Structure 243 (1971), S. 126-136 
    ISSN: 0005-2795
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2752-2755 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of the NiFe/Co(CoFe)/Al(Ta)-oxide/Co(CoFe) ferromagnetic tunnel junction was investigated using cross-sectional transmission electron microscopy (TEM). The effect of the insulating layer on the magnetoresistive (MR) properties of the junction was studied. The multilayer junction was formed using magnetron sputtering and the insulating layer was created by plasma oxidation of the deposited metal film. TEM analysis showed that the MR ratio was highly dependent on the insulating layer. For the NiFe/Co/Al-oxide/Co junction, when the Al2O3 layer was 13 Å, the oxide layer was flat and the highest MR ratio of 15% was attained. As the Al2O3 thickness increased, the interface roughness rapidly increased, and the MR ratio also markedly dropped. In contrast, NiFe/CoFe/Al-oxide/CoFe junction showed a comparatively flatter interface and recorded a higher MR ratio. The Ta-oxide insulating layer remained flat regardless of the thickness; however, the largest MR ratio of only 9% was obtained within a narrow thickness range. We have demonstrated that there exists a direct correlation between the microstructure of the oxide layer and the MR ratio of the junction, which could be utilized to optimize the electrical properties of the ferromagnetic tunneling junction. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 217-220 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) were used to characterize low resistance (100–1000 Ω μm2) tunneling junctions consisting of Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al (6.6 and 7.7 Å)–oxide/CoFe/NiFe/Ta multilayers after annealing at temperatures ranging from 250 to 500 °C. The Al (7.7 Å) junction showed continual improvement in the magnetoresistance (MR) ratio when annealed up to 300 °C while the MR ratio of the Al (6.6 Å) junction dropped sharply above 250 °C in spite of the only 1 Å difference in the deposited thickness of aluminum metal prior to plasma oxidation. TEM measurement provided evidence that the annealing process improves, in general, structural uniformity in the insulation layer, but thermal treatment can also degrade junction performance at a relatively low temperature due to current leakage through the electrodes. Current leakage can be problematic for a junction whose insulation barrier may be too thin (less than ∼10 Å). Both RBS and TEM analyses indicated that the maximum annealing temperature of exchange biased junctions lies between 400 and 500 °C above which the multilayer structure in the pinned electrode is destroyed by interdiffusion. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1431-1435 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Auger electron spectroscopy (AES) and Rutherford backscattering spectroscopy (RBS) analysis were carried out in order to study the extent of interdiffusion during thermal treatment of the pinned electrode (Ta/NiFe/Cu/NiFe/IrMn/CoFe) of the magnetic tunneling junction. From the concentration profile results from RBS and AES, a significant amount of Mn–CoFe interdiffusion was observed when the sample was annealed at 200 °C–400 °C under vacuum. The multilayer was completely intermixed at 400 °C, losing the exchange bias interaction between the IrMn and CoFe layers. It was demonstrated that the migration of Mn was enhanced by the preferential oxidation of Mn on the surface. In fact, when a thin layer of Ta for oxidation protection was deposited on top of the electrode, the Mn diffusion was minimal up to 300 °C. Our experiment suggests that in actual magnetic tunneling junctions, the Mn diffusion to the insulation layer could be enhanced by the presence of the free oxygen radicals in the insulation layer produced during the plasma oxidation of the Al layer. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 50 (1994), S. 1768-1770 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Interface science 3 (1995), S. 85-100 
    ISSN: 1573-2746
    Keywords: carbon ; graphite ; interface ; simulation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Amorphous carbon/graphite interface is modeled by molecular dynamic simulation using a Tersoff-type potential function with the Brenner parameters for in-plane interaction combined with the pair potential function for the interplanar bonding. The interface is created by compressing the amorphous carbon produced in a separate simulation with perfect crystalline graphite terminated to expose (1120) planes. The planar structure and weak interplanar bonding allow the graphitic planes to deform in order to accommodate the bonds formed at the interface, which is consistent with the HRTEM study of the interface. The simulation indicates that the generated interface mostly consists of nearly sp2 hybridized bonding connecting the two sides. The bonds across the interface when formed are likely to maintain their equilibrium configurations. Due to the large interplanar spacing, many atoms both on the graphite and a-C sides are left unbonded leaving the interface energetically unfavorable with respect to the bulk. These unbonded radicals probably weaken the structural rigidity of the interface providing a fracture path under stress.
    Type of Medium: Electronic Resource
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