Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 3534-3536
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated structural and electrical properties of Al(As,Sb) dual-anion compounds grown by molecular beam epitaxy at low substrate temperature. We find single-crystal growth down to substrate temperatures as low as 275 °C. Additional donor-type defects form when Al(As,Sb) is grown at 450 °C or less, with the defect density increasing with decreasing substrate temperature. We find no evidence for the formation of precipitates upon annealing low-temperature-grown (LTG) Al(As,Sb) in contrast to LTG arsenides. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120382
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