ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Compound semiconductor heterostructure (Al–Ga2Se3–nSi) uses a new material for photovoltaic applications. This Metal-Semiconductor-Semiconductor (MS'S) structure with Ga2Se3 as an intermediate layer has been proposed as a better alternative to conventional Metal-Insulator-Semiconductor (MIS) solar cells for normal illumination. It is shown here that in the whole range – starting from lower intensity, i.e. at a concentration ratio, Cr∼1, to very high illumination level, Cr∼2000, the proposed new structure gives better results than corresponding MIS solar cells. © 1998 Chapman & Hall
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1004387607149
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