ISSN:
1573-4846
Keywords:
sol-gel method
;
alkoxides
;
films
;
bismuth
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract Study of the interactions in Bi(OR)3-Ta(OR)5-ROH (R = Me, Et, iPr) at 20°C show that metal ethoxides are the best of the investigated precursors for the production of bismuth tantalates via alkoxides. Polycrystalline SrBi2Ta2O9 (SBTO) and BiTaO4 films on Si-SiO2-Ti-Pt substrates with thicknesses of 0.4–0.5 μm and 0.4 μm, respectively, have been formed by sol-gel processing. The most stable solutions for film application were obtained by using mixed-metal Bi-Ta ethoxides and solutions of Sr carboxylate (2-ethylhexanoic acid derivative) in 2-ethylhexanoic acid. Films annealed at 700–750°C for 30 min were single-phased. SBTO films demonstrated good ferroelectric properties: remanent polarization ranged from 3.5 to 4.0 μC/cm2 and coercive voltage 1.5–2.0 V, whereas BiTaO4 films showed dielectric behavior.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008619222621
Permalink