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  • 1
    Electronic Resource
    Electronic Resource
    Interface growth with atoms and preformed clusters: Morphology and Schottky barrier variations for Au/InP(110) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2647-2649 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With synchrotron radiation photoemission, we contrast the morphology and the Schottky barrier obtained when Au atoms are condensed onto InP(110) at 300 and ∼60 K to what is obtained when preformed, metallic Au clusters are deposited. Atom by atom deposition at either temperature leads to substrate disruption and Fermi level pinning 0.75 eV below the conduction-band minimum (CBM). Deposition of preformed Au clusters induces almost no disruption and a pinning position 0.42 eV below the CBM. Differences reflect the dependence upon the process, and therefore the energetics, of bringing dissimilar atoms in contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100182
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  • 2
    Electronic Resource
    Electronic Resource
    Fermi level movement for n- and p-GaAs interfaces: Effects of temperature and dopant concentration (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2547-2549 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission studies demonstrate that temperature and dopant concentration dependent movement of the surface Fermi level is controlled by coupling between adatom-induced and bulk states. At a low temperature for lightly doped n- or p-GaAs, initial band bending inhibits tunneling and EF remains near the band edges until the onset of metallicity. For heavy doping, greater band bending reflects a thinner depletion region. Thermal cycling for 20≤T≤300 K for low coverages demonstrates that band bending is reversible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101977
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  • 3
    Electronic Resource
    Electronic Resource
    Abruptness of Au-Si contacts with thin CoSi2 interlayers (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1946-1948 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution synchrotron radiation photoelectron spectroscopy has been used to study Au/Si and Au/CoSi2/Si interface formation at room temperature. Our results show Au-Si intermixing, the absence of a well defined Au-Si compound, and surface segregation of small amounts of Si to the Au surface. An interlayer formed by the deposition of ≤3 A(ring) of Co has relatively small effect on this Au-Si atomic profile. Intermixing is abruptly quenched, however, when the Co deposition exceeds 3.5 A(ring), and a Au film free of Si can grow on the CoSi2 layer. These results demonstrate the effectiveness of CoSi2 layer as a barrier against Au-Si intermixing and identify the critical coverage of Co needed to passivate the Si surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98309
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  • 4
    Electronic Resource
    Electronic Resource
    Photoemission and inverse photoemission studies of La adatom interactions with YBa2Cu3O6.9 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1296-1300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface reactions that occur when adatoms of La are deposited onto the high-temperature superconductor YBa2Cu3O6.9 have been studied using high-resolution synchrotron radiation photoelectron spectroscopy and inverse photoelectron spectroscopy. These adatoms lead to the depletion of oxygen from the substrate as La-O forms at low coverage. The process of oxygen withdrawal quickly becomes kinetically limited as the thickening overlayer impedes mass transfer. At the same time, Cu atoms released from the disrupted, no-longer- superconducting substrate outdiffuse into, and segregate to the top of, the growing La overlayer. The complex reacted interface, therefore, exhibits phases which are likely to be superconducting, insulating, and metallic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341849
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  • 5
    Electronic Resource
    Electronic Resource
    Prebreakdown conduction in zinc oxide varistors: Thermionic or tunnel currents and one-step or two-step conduction processes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1077-1079 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter is aimed at understanding the intergranular conduction in zinc oxide varistors. In particular, we have studied current-voltage and Arrhenius plots of the resistive current for the prebreakdown conduction. A current-temperature (I-T) relation has been found to present two breaks at ∼370 and ∼240 K. Although this result can be interpreted as a consequence of distinct regimes, we found that experimental I-T curves can be theoretically reproduced by calculating currents for a double Schottky barrier. Experimental results were fitted with one- and two-step transport process models. It was found that a two-step model better reproduces the electrical properties of these devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109838
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  • 6
    Electronic Resource
    Electronic Resource
    Cooling rate effects in ZnO varistors (1992)
    Springer
    Journal of materials science 3 (1992), S. 218-221 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Cooling rate effects on ZnO-Bi2O3 varistors are presented. In particular, the oxygen vacancies (V o + ) concentration was determined by electron paramagnetic resonance (EPR) spectroscopy and related to the conductivity. It was found that a higher cooling rate provokes an increase of the V o + concentration and a higher conductivity. Current density versus temperature curves are fitted with a modified Schottky barrier model which reflects a higher active donor concentration near the grain interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00703029
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  • 7
    Electronic Resource
    Electronic Resource
    Ammonia decomposition on polycrystalline Pt at pressures between 1.3 and 93 kPa (1985)
    Springer
    Reaction kinetics and catalysis letters 28 (1985), S. 407-410 
    Details
    ISSN: 1588-2837
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Abstract Измерена кинетика разложения аммиака на поликристаллической Pt в интервале температур 600–1700 К и при давлениях от 1,3 до 93 кПа, которая подчиняется уравнению Пангмюра-Хиншельвуда для скорости мономолекулярной реакции. Это уравнение скорости, как уже ранее установлено, соответствует данным в том же интервале температур, но для давлений от 2 до 1400 Па.
    Notes: Abstract The kinetics of ammonia decomposition on polycrystalline Pt at temperatures between 600 and 1700 K and at pressures between 1.3 and 93 kPa were measured and correlated with a Langmuir-Hinshelwood unimolecular reaction rate expression. This rate expression had previously been shown to fit data in the same temperature range for pressures between 2 and 1400 Pa.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02062973
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  • 8
    Electronic Resource
    Electronic Resource
    Exact one-band model calculation using the tight-binding method (1998)
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 68 (1998), S. 285-291 
    Details
    ISSN: 0020-7608
    Keywords: tight-binding ; band spectrum ; orbital nonorthogonality ; Chemistry ; Theoretical, Physical and Computational Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: A one-dimensional one-band model is presented which enables a tight-binding calculation to be performed with full rigor. All the multicenter integrals involved in the calculation of the Hamiltonian matrix elements can be analytically computed in terms of a single parameter: the ratio between the lattice spacing and the extension of the “atomic” wave function. Moreover, the exact expression for the spectrum shows how the usual approximations of limiting the range of interactions and neglecting the nonorthogonality of the basis set degrade the results of the calculations.   © 1998 John Wiley & Sons, Inc. Int J Quant Chem 68: 285-291, 1998
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal conductivity of plastic foams (1983)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 23 (1983), S. 293-298 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A simple equation enabling the prediction of the thermal conductivity of plastic foams, without the aid of adjustable parameters, is proposed. The equation is based on a recurrent method, previously developed, that showed reasonable agreement with experimental results. Ways of decreasing the thermal radiation contribution are shown. In particular, the influence of cell size, radiation transmission through solid membranes, and low-emissivity boundary surfaces are analyzed. Errors involved in steady techniques of measuring the thermal conductivity associated with radiation are discussed.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760230602
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  • 10
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    Vacancy-Assisted Halogen Reactions onSi(100)-(2×1) (1999)
    American Physical Society
    Details
    Publication Date: 1999-01-18
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
    Published by American Physical Society
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