ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The morphology and atomic structure of 4H-SiC(1102) and 4H-SiC(1102) surfaces, i.e.the surfaces found in the triangular channels of porous 4H-SiC, have been investigated using AFM,LEED and AES. After hydrogen etching the surfaces show steps parallel and perpendicular to the caxis,yet drastically different morphologies for the two isomorphic orientations. Both surfacesimmediately display a sharp LEED pattern. Together with the presence of oxygen in the AES spectrathis indicates the development of an ordered oxide. Both surfaces show an oxygen free, well orderedsurface after Si deposition and annealing
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.677.pdf
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