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  • 1
    Electronic Resource
    Electronic Resource
    Radiation damage behavior of LiNbO3 crystal by MeV F ion implantation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1625-1628 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X, Y, and Z crystalline cut LiNbO3 crystals were implanted by 1.0 MeV F ions with a dose of 1×1015 ions/cm.2 The virgin and implanted LiNbO3 crystals were investigated using the Rutherford backscattering/channeling technique. The obtained minimum yields of virgin crystals were 4%, 8%, and 6% for X-, Y-, and Z-cut LiNbO3 crystals, respectively, because of their different arrangements of lattice sites in channeling direction. The measured damage profiles are also influenced by the arrangement of lattice sites in channeling measurements. The damage profiles of X-cut LiNbO3 crystal induced by 1.0 MeV F+ at a fluence range of 1×1014–3×1015 ions/cm2 have been studied and compared with the Transport of Ions in Matter, version 1990 calculation. It has been found that not only the nuclear energy deposition but also the electronic energy deposition influences the defect production.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354811
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  • 2
    Electronic Resource
    Electronic Resource
    Spin polarization in paramagnetic layers on magnetic substrates : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5975-5977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin polarization of conduction electrons in a paramagnetic layer due to an adjacent magnetic layer has been derived based on the mixing interaction between the local and conduction electrons. Specifically, based on the band structure of paramagnetic chromium, we have calculated the spin polarization in a Cr layer on Fe(100) substrates. The results are in reasonably good agreement with recent experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353488
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  • 3
    Electronic Resource
    Electronic Resource
    Lattice disorder in LiNbO3 crystals induced by MeV Cu+ implantation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 899-903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of 1 MeV Cu ion implantation in LiNbO3 crystals have been investigated using the Rutherford backscattering/channeling technique. The samples have been implanted with doses ranging from 5×1014 ions/cm2 to 2×1015 ions/cm2. The damage profiles have been deconvoluted from Rutherford backscattering spectra after considering the energy spreading due to difference of stopping power between nonchanneled and channeled particles. The energy dependence of the scattering cross section and stopping power have also been taken into account. The damage profiles have compared with TRIM'89 (Transport of Ions in Matter, version 1989) code calculation. For the lowest dose (5×1014 ions/cm2) implantation, the damage profile is in agreement with the defect profile calculated using the trim code. The damage peak is located shallower than the theoretical ion mean projected range, but the damage spread is larger than the ion spread. For higher dose implantations, a broadening of the damage profiles is observed, probably due to radiation enhanced defect migration during ion implantation. For doses higher than 2×1015 ions/cm2, an amorphous layer will be observed in the LiNbO3 crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351765
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  • 4
    Electronic Resource
    Electronic Resource
    Antiferromagnetic coupling in magnetic multilayers with a narrow gap semiconductor spacer : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4776-4778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Antiferromagnetic (AF) coupling has been observed in sputtered Fe/Si multilayers at room temperature, with thin spacers (〈20 A(ring)) which were claimed to be FeSi. To study the magnetic coupling in this system we extend the RKKY interaction approach to a temperature-dependent narrow gap semiconductor. The strong AF coupling at room temperature and weakly ferromagnetic (F) coupling at low temperatures observed in Fe/Si can be explained from this model. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361668
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  • 5
    Electronic Resource
    Electronic Resource
    Gettering effects in BF2-implanted Si(100) by ion-beam defect engineering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5014-5019 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering effects of ion-beam defect engineering (IBDE) in BF2-implanted silicon have been studied. It has been shown that the IBDE technique may be useful in the improvement of the properties of BF2-implanted silicon. The gettering layer introduced by MeV Si ion irradiation and formed during the process of thermal annealing collects not only impurities but also simple defects. Thus, it effected (1) reductions of secondary defects and F impurity accumulation in the BF2-doped region; (2) reduction of the anomalous diffusion of B atoms; and (3) enhancement of the electrical activation of B atoms. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359311
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  • 6
    Electronic Resource
    Electronic Resource
    Damage profiles in silicon tilt angles bombarded by high energy Cu ions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3357-3361 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High energy (MeV) Cu ions were implanted into n-type Si samples at angles of 7°, 30°, 45°, and 60°. The doses were 5×1014 and 2×1014 ions/cm2. The damage profiles in Si(100) were investigated by a Rutherford backscattering/channeling technique with 2.1 MeV He ions. The longitudinal damage straggling and lateral damage spread are estimated for 1.0 MeV Cu+ implanted in Si(100). The values obtained are compared with the trim (transport of ions in matter) code. The results show that the longitudinal damage straggling is found to be in good agreement with the calculated one within 13% by use of the trim code, but the experimental value of the lateral damage spread is higher than the calculated one by about 28% using the trim code. The effect of dose rate, energy, and dose on damage distribution is investigated also.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357460
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  • 7
    Electronic Resource
    Electronic Resource
    Ab initio study of biquadratic coupling in Fe/Cr multilayers (abstract) : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3764-3764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic coupling in multilayer materials is a fascinating phenomenon that manifests itself in a wide range of effects, including novel magnetic arrangements and anomalous transport properties. We employ the locally self-consistent multiple scattering method,1 which has recently been extended to treat general noncollinear magnetic systems,2 to study interlayer magnetic coupling in Fe/Cr(100) multilayer structures. The direction and magnitude of magnetization of each monolayer in a magnetic multilayer with 10 monolayer (ML) Fe layers separated by a 5 ML Cr spacer are obtained. We found that the Fe layers are nearly 90° coupled, and the Cr spacer is in spiral magnetic configuration. We attribute this biquadratic coupling in Fe/Cr multilayers to the nature of itinerant antiferromagnetism of the Cr spacer. These results will be discussed in connection with recent experiments. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365500
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of ion beam defect engineering on carrier concentration profiles in 50 keV P+-implanted Si(100) (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3183-3185 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallower carrier concentration profiles in 50 keV P+-implanted Si(100) after annealing at 1000 °C for 1 h have been observed when a buried amorphous layer was formed by an additional irradiation of 1.0 MeV Si+ ions prior to annealing (i.e., ion beam defect engineering process). The secondary defects formed in the MeV Si+ damaged region act as gettering sites for the collection of interstitials from the shallower depths which are responsible for the transient diffusion of P, and therefore the transient diffusion of P is reduced and the carrier concentration profiles become shallower.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109123
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  • 9
    Electronic Resource
    Electronic Resource
    Reduction of secondary defects in BF2 implanted Si(100) by ion beam defect engineering (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 175-177 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reduction of secondary defects in 50 keV, 2×1015 BF2/cm2 implanted Si(100) has been studied by Rutherford backscattering and channeling technique. Secondary defects with high densities have been found in BF2 implanted Si(100) after thermal annealing and rapid thermal annealing. However, a noticeable reduction of secondary defects in BF2 damaged region was observed when a buried amorphous layer was formed by an additional irradiation of 1.0 MeV Si+ ions prior to annealing (i.e., ion beam defect engineering process).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111522
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  • 10
    Electronic Resource
    Electronic Resource
    Lattice disorder in silicon induced by 2.0 MeV Cu+ irradiation (1992)
    Springer
    Applied physics 55 (1992), S. 332-334 
    Details
    ISSN: 1432-0630
    Keywords: 61.80.Mk ; 79.20.Rf ; 79.20.Nc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effect of 2.0 MeV Cu+ irradiation on Si(100) crystal has been studied by the Rutherford backscattering/channeling technique. Analysis of the lattice disorder distribution has been performed under 〈100〉 direction of tilting off from the target normal: 7°, 30°, and 45° as well as different doses. The lattice disorder distributions in Si(100) have been compared with TRIM'89 simulation. The results show that the lattice disorder distributions in Si(100) under different irradiation angles seem to be in good agreement with TRIM'89 simulation. When the dose increases up to 8.7×1014 ions/cm2, the defect concentration increases leading to the formation of an amorphous layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324080
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