Publication Date:
2017-06-29
Description:
The oxidation resistance of high-purity and dense Ti 3 SiC 2 bulk ceramic which was prepared by hot-pressing was investigated at 700-1200 °C for 5-40 hours in air and low oxygen atmosphere, respectively. After oxidation, the mass gain curves of Ti 3 SiC 2 were obtained, and the oxide layer was analyzed qualitatively and quantitatively. The results showed that the oxide layer was mainly TiO 2 and SiO 2 mixture below 1100 °C in air. When the oxidation temperature reached 1100 °C and above, the oxidation proceeded rapidly, and the mass gain curves followed the parabolic law. The oxide layer changed from single-layer to double-layer structure, which comprised of an inner layer of TiO 2 with SiO 2 solid solution and an outer layer of TiO 2 . In low oxygen atmosphere, the oxidation was fainter than that in air. But the double-layer structure would also occur. These two oxide layers could protect the substrate to be further oxidized. In summary, Ti 3 SiC 2 bulk materials possess good high temperature oxidation resistance both in air and low oxygen atmosphere below 1100°C. This article is protected by copyright. All rights reserved.
Print ISSN:
1546-542X
Electronic ISSN:
1744-7402
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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