Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 6394-6396
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A metal layered structure consisting of Cr/Cu buffer layer and two Co layers with different thickness, separated by a Cu spacer, was deposited on Si wafers using magnetron sputtering. The influence of the individual layer's thickness on the magneto transport and magnetic hysteresis was studied. Optimization of the magnetoresistance performance was supported by the current in-plane giant magnetoresistance (GMR) modeling based on the solution to the Boltzmann transport equation. The best structures demonstrated very sharp magnetization reversal of the lower Co layer at about 100 Oe accompanied by resistivity change with a rate of 0.9%/Oe. Maximum GMR effect measured at 5 K was 9.6%. Samples with capping layers exhibited substantially smaller switching fields of the upper Co layer than the uncapped samples with a minute amount of CoO. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.372717
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