ISSN:
1432-0630
Keywords:
PACS: 71.55; 63.20
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. A set of simplified analytical expressions for carrier capture coefficients, including quantatively the charge-dependent effect, have been obtained for easy physical examination and comparison with experiments. The temperature-related charge-state-dependent factor F(T) thus calculated could be used to present more accurately the nature and magnitude of the charge state of a trap centre. The ranges of values of F(T) valid for attractive, repulsive and neutral centres are also obtained. In addition, we show that the thermal ionization energy for the B centre in GaAs is a function of temperature. The importance of the data of capture cross-section at low temperatures in determining the charge state and characteristic of a deep centre is also manifested. Both the absolute magnitude and the temperature-dependent behaviour of the calculated capture cross-section are well-supported by the very good fits to the experimental electron cross-sections for A and B centres in GaAs reported by Lang [7] and Wang et al. [22] and for Cu centre in Ge reported by Zhdanova and Kalashnikov [23].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050350
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