Publication Date:
2017-11-21
Description:
Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories, Published online: 20 November 2017; doi:10.1038/nmat5028 An in-plane memory device based on multidomain BiFeO3 thin films is reported. Highly conductive domain walls appear only during the application of a read-out field, a non-destructive process that reduces accumulation of mobile defects on the walls.
Print ISSN:
1476-1122
Electronic ISSN:
1476-4660
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Natural Sciences in General
,
Physics
Permalink