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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial silicide formation by multi-shot irradiation of Ni thin films on Si with Nd laser (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4560-4565 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniform and epitaxial NiSi2 layers were obtained by consecutive irradiation of a Ni thin layer deposited onto Si with Nd-glass laser irradiation, 30-ns pulse duration, using up to 15 shots. The best quality epitaxial NiSi2 layer, for a 50-nm-thick Ni layer deposited on Si(111), was obtained with 10 shots of 1.3 J/cm2 energy density. The normalized minimum yield of the Ni signal amounted to 25%. The stability of the formed compound was investigated by furnace annealing in the 300–800 °C temperature range. After annealing at 300 °C-1 h backscattering and channeling analysis indicated a worsening of the epitaxial quality of the compound. X-ray diffraction patterns showed the presence of the NiSi silicide in addition to the NiSi2 silicide. At 500 °C-1 h annealing the reaction occurred over long distance and a large amount of NiSi was formed at the expense of the NiSi2 and the unreacted Ni. At 800 °C the epitaxial quality of the NiSi2 improved and the Ni minimum yield reached 10%. The NiSi2 was the only silicide present after irradiation and 800 °C-1 h annealing. Channeling analysis established also that the NiSi2 was b type: i.e., the silicide layer was rotated 180° about the surface normal 〈111〉 axis of the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335360
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  • 2
    Electronic Resource
    Electronic Resource
    Behavior of high dose O+-implanted Si/Ge/Si structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 890-892 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The synthesis of a buried oxide layer in multilayer Si/Ge/Si structures by the implantation of high doses of 200 keV O+ ions is studied by Rutherford backscattering analysis. The presence of Ge is found to have a minimal effect upon the mass transport of excess oxygen and interstitial silicon. Infrared transmission spectroscopy and x-ray photoelectron spectroscopy confirm that the oxygen atoms bond preferentially to silicon forming silicon dioxide and SiOx, where x〈2, with no evidence for Ge—O bonding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103395
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant tunneling through ErAs semimetal quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1268-1270 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant tunneling is observed in double barrier resonant tunneling diodes with semimetallic ErAs quantum wells. Magnetic field dependence distinguishes two different resonant channels while the thickness dependence of the voltage for resonant tunneling strongly suggests that the electrons tunnel through hole states in the semimetal quantum well. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114393
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of fluorine co-implantation on MeV erbium implanted silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3158-3160 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorine was co-implanted with 2 MeV erbium into silicon substrates. The thermal treatment for implanted samples was started with a 600 °C, 3 h anneal for solid-phase epitaxial regrowth then followed by a 900 °C, 30 min anneal to optically activate the erbium atoms. Photoluminescence measurements have shown a strong enhancement of the luminescence intensity in samples co-implanted with fluorine which, it is suggested, leads to the formation of Er–F complexes and facilitates defect annealing in the silicon lattice. Rutherford backscattering spectrometry was used to characterize the crystalline quality and erbium redistribution after the regrowth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113708
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  • 5
    Electronic Resource
    Electronic Resource
    Precipitation in heavily arsenic-implanted GexSi1−x alloys (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1117-1119 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of precipitation and diffusion in Ge0.5Si0.5 alloy implanted with As+ ions at an energy of 100 keV with a dose of 6×1016 cm−2 and subsequently annealed at 800 and 1000 °C for 1 h. The samples were analyzed by transmission electron microscopy and x-ray energy dispersive spectrometry. A high density of precipitates was observed near the surface of the samples after annealing both at 800 and 1000 °C. The behavior of the precipitation is strongly dependent on the anneal temperature. When the anneal temperature increases, the average size of precipitates increases and the distribution of the precipitates is localized in the vicinity of the surface. X-ray spectra show that most of the largest precipitates formed during the annealing are arsenides. Rodlike precipitates formed during the thermal annealing at 800 °C are tentatively identified as monoclinic GeAs by selected electron diffraction patterns. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113831
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  • 6
    Electronic Resource
    Electronic Resource
    Study of the microstructure of low energy (70 keV) oxygen implanted silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3130-3132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device grade (100) single crystal silicon wafers have been implanted with 70 keV oxygen ions over a dose range from 3.3×1017 /cm2 to 10×1017/cm2 at a temperature of 680 °C. The wafers were subsequently annealed at 1320 °C for 6 h. Transmission electron microscopy and ion channeling studies show that both the as-implanted microstructure and the damage distribution play an important role in determining the final microstructure of the annealed wafer. As the dose increases so does both the values of χmin for both as-implanted and annealed wafers, and the threading dislocation density in the silicon overlayer of the annealed wafers. For the wafer implanted with 70 keV oxygen ions at the lowest dose (3.3×1017/cm2), the threading dislocation density in the silicon overlayer after annealing was less than 105/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105761
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  • 7
    Electronic Resource
    Electronic Resource
    Submicron GaMn quasicrystals in ferromagnetic GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 143-145 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaMn icosahedral particles with quasicrystalline order have been found in Mn implanted and rapidly annealed GaAs by means of selected-area electron diffraction, high-resolution, and dark-field electron microscopy. The orientation relationship between the submicron quasicrystals with the icosahedral (2/m 3¯5¯) symmetry and the face-centered cubic (fcc) GaAs matrix is determined to be: i5¯ (the fivefold inversion axis in (2/m 3¯5¯))//[110]GaAs, i3¯ (the threefold inversion axis)//[111¯]GaAs, and i2 (the twofold axis)//[121¯]GaAs. The statistics of these structural studies, combined with magnetic force microscopy, indicate that the submicron quasicrystals are ferromagnetic. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119486
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of rapid thermal annealing on the optical properties of gallium nitride grown by gas-source molecular-beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 936-938 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering, photoluminescence (PL), and nuclear reaction analysis (NRA) have been employed to investigate the effects of rapid thermal annealing (RTA) on GaN films grown on sapphire (0001) substrates by gas-source molecular-beam epitaxy. The Raman spectra showed the presence of the E2 (high) mode of GaN and shift of this mode from 572 to 568 cm−1 caused by annealing. The results showed that RTA has a significant effect on the strain relaxation caused by the lattice and thermal expansion misfit between the GaN epilayer and the substrate. The PL peak exhibited a blueshift in its energy position and a decrease in the full width at half maximum after annealing, indicating an improvement in the optical quality of the film. Furthermore, a green luminescence appeared after annealing and increased in intensity with increasing annealing time. This effect was attributed to H concentration variation in the GaN film, which was measured by NRA. A high H concentration exists in as-grown GaN, which can neutralize the deep level, and the H-bonded complex dissociates during RTA. This leads to the appearance of a luminescent peak in the PL spectrum. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120878
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  • 9
    Electronic Resource
    Electronic Resource
    Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4240-4242 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425453
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  • 10
    Electronic Resource
    Electronic Resource
    Controlled production of aligned-nanotube bundles (1997)
    [s.l.] : Macmillan Magazines Ltd.
    Nature 388 (1997), S. 52-55 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Carbon nanotubes might be usefully employed in nanometre-scale engineering and electronics. Electrical conductivity measurements on the bulk material, on individual multi-walled and single-walled nanotubes and on bundles of single-walled nanotubes have revealed that they may behave as metallic, ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/388052a0
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