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  • 1
    Electronic Resource
    Electronic Resource
    Aging of superconducting Y1Ba2Cu3O7−x structures on silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1339-1342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The long-term stability of epitaxial thin film structures of superconducting Y1Ba2Cu3O7−x on silicon wafers (100), using a yttria-stabilized ZrO2(YSZ) buffer, is presented and compared to identical structures on SrTiO3 (100) and yttria-stabilized ZrO2 (100) single crystals. For Y1Ba2Cu3O7−y/YSZ/Si heterostructures, the maximum Y1Ba2Cu3O7−y film thickness is limited to 50 nm; otherwise thermal strain induces microcracks. Thinner films are more stable, but nevertheless show aging over several weeks, which affects critical current density and room-temperature resistivity, but not the critical temperature Tc.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353252
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation state of Cu ions in H-charged YBa2Cu3O7−δ films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3206-3208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission experiments were performed on H-charged YBa2Cu3O7−δ films at room temperature. Samples produced by laser ablation were charged with H from the gas phase prior to the x-ray photoelectron spectroscopy measurements. X-ray photoelectron spectra clearly show the influence of H charging on the oxidation states of Cu ions. A linear correlation between H concentration and the intensity of the Cu 2p satellite line related to the mean line was found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351486
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  • 3
    Electronic Resource
    Electronic Resource
    Superconducting multiturn flux transformers for radio frequency superconducting quantum interference devices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5966-5974 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article describes three planar layouts of superconducting multiturn flux transformers integrated with a coplanar resonator for radio frequency (rf) superconducting quantum interference device (SQUID) magnetometers. The best magnetic field noise values of 22 and 11.5 fT/Hz1/2 in the white noise regime were obtained for the layout with two input coils and the layout with the labyrinth resonator, respectively. Excess low-frequency noise (about 200 fT/Hz1/2 at 10 Hz) was present. Computer simulation showed that the loss in this trilayer system was dominated by the high loss tangent of the dielectric film used for the separation of the upper and lower superconducting films. The rf coupling coefficient krf between the resonator and the flip-chip-coupled SQUID was also estimated. The values krf2(approximate)14×10−3 obtained for the layout with two input coils, and krf2(approximate)45×10−3 for the layout with the labyrinth resonator were considerably higher than the typical value of krf2(approximate)7×10−3 for the single-layer coplanar resonator. These high coupling coefficients have compensated the somewhat degraded unloaded quality factor of the resonator, thus securing the optimum operation of the rf SQUID. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322382
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  • 4
    Electronic Resource
    Electronic Resource
    Equipment for in situ resistivity and x-ray diffraction studies during ion implantation at temperatures between 4 K and 1270 K (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3961-3964 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An instrument is presented which was designed for comprehensive in-situ analysis of phase formation and transformation during the ion implantation process. An implanter end station with heatable He-cryostat as a sample holder was built. A temperature range from 4 to 1270 K is covered by the sample holder so that temperature can be varied during implantation or subsequent annealing in high vacuum. Both x-ray diffraction and four-point resistivity measurement are installed as in-situ investigation techniques. In this way a detailed study of structural changes and defect kinetics during ion bombardment is now possible. The whole instrument has been successfully tested. Examples of carbon ion implantation in titanium and iron are given. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147299
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  • 5
    Electronic Resource
    Electronic Resource
    Graphoepitaxy of CeO2 on MgO and its application to the fabrication of 45° grain boundary Josephson junctions of YBa2Cu3O7−x (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5058-5061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We communicate a detailed study of the epitaxial growth of CeO2 on MgO. The key feature of the growth is the dependence of the in-plane orientation of the CeO2 epitaxial layer on the MgO surface morphology. Atomic force microscopic (AFM) measurements, x-ray analyses, as well as high-resolution transmission electron microscopy (HRTEM) investigations reveal that on rough substrates a cube-on-cube growth of CeO2 on MgO occurs while on smooth substrates the CeO2 unit cell is rotated around the surface normal by 45° with respect to the MgO unit cell when the deposition rate is low (∼0.3 A(ring)/s) during the first stages of growth. This growth mechanism can be used for a defined fabrication of 45° grain boundaries in the CeO2 layer by controlling the surface roughness of the MgO substrate. This report demonstrates that these 45° grain boundaries may be used to fabricate YBa2Cu3O7−x Josephson junctions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359734
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3337-3339 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of Y-doped SrZrO3 have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000–1200 °C and at an oxygen pressure of 1.5×10−1 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x-ray diffraction (XRD). We found an epitaxial relationship of SrZrO3 (0k0) [101](parallel)MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361234
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  • 7
    Electronic Resource
    Electronic Resource
    Correlation of YBa2Cu3O7 step-edge junction characteristics with microstructure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1131-1139 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage characteristics, Josephson radiation spectra, and critical current versus magnetic-field dependences were measured in epitaxial, c-axis YBa2Cu3O7 step-edge Josephson junctions (SEJs) on SrTiO3 and LaAlO3 substrates with various step angles α. The results were correlated with microstructural data to determine the origin of the observed weak-link behavior. It was shown that on steps with α(approximately-greater-than)45° the SEJ is a series connection of two weak links unambiguously correlated with the occurrence of two 90° tilt grain boundaries. On steep steps, α≥70°, the boundary at the upper step edge has, on average, the (103) symmetry, while the lower one is predominantly of the basal-plane-faced (010)(001) type. Correspondingly, one link is weaker than the other, with the weaker link originating on the (010)(001) boundary. However, others have shown that analogous grain boundaries in planar (103) and biepitaxial a-axis/c-axis films do not exhibit a strong magnetic-field dependence of critical current, which is characteristic of a weak link. Hence, it is proposed that the weak-link behavior of boundaries on step edges originates from their defect structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360347
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  • 8
    Electronic Resource
    Electronic Resource
    Structural and optical characterization of epitaxial waveguiding BaTiO3 thin films on MgO (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3305-3310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial waveguide structures of c-axis oriented BaTiO3 thin films on MgO(001) have been grown by pulsed laser deposition. The structural properties of the samples have been characterized by Rutherford backscattering spectrometry/ion channeling (RBS/C), x-ray diffraction, and atomic force microscopy. We found excellent crystalline quality even up to thicknesses of a few microns. This has been confirmed by RBS/C minimum yield values of 2%–3%, a full width at half maximum of 0.36° of the BaTiO3 (002) rocking curve, and a rms roughness of 1.1 nm for a 950 nm BaTiO3 film. The out-of-plane refractive index was measured to be close to the extraordinary bulk value with the birefringence being about one third of the bulk value. Waveguide losses of 2.9 dB/cm have been demonstrated. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367099
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  • 9
    Electronic Resource
    Electronic Resource
    High quality epitaxy of YBa2Cu3O7−x on silicon-on-sapphire with the multiple buffer layer YSZ/CeO2 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1429-1431 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality YBa2Cu3O7−x films on silicon-on-sapphire were grown using a multiple buffer layer, consisting of YSZ and CeO2. Ion channeling reveals the high crystalline perfection of the YBa2Cu3O7−x films. A channeling minimum yield for the Ba signal as low as 3% was measured. The normal state resistivity of 200 μΩ cm at 300 K, critical temperatures above 90 K, with transition widths down to 0.5 K, critical current densities above 2×106 A/cm2 at 77 K and surface resistance values of 1.4 mΩ at 18.9 GHz and 77 K confirm the high quality of the YBa2Cu3O7−x films. These results are very promising for integrated superconductor and semiconductor applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109647
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  • 10
    Electronic Resource
    Electronic Resource
    Improved inhibit patterning of YBa2Cu3O7 thin films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3041-3043 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an improved reaction patterning technique to fabricate very stable thin film devices of YBaCuO on various substrates. Our approach includes in situ patterning and completely avoids the contact between YBaCuO superconductor and chemical or physical etchants. Very thin, high quality YBaCuO structures are grown on ridges or in trenches and in situ protected by passivating layers, demonstrating excellent long term stability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108003
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